A twin-plane based nanowire growth mechanism is established using Au catalyzed Ge nanowire growth as a model system. Video-rate lattice-resolved environmental transmission electron microscopy shows a convex, V-shaped liquid catalyst-nanowire growth interface for a ⟨112⟩ growth direction that is composed of two Ge {111} planes that meet at a twin boundary. Unlike bulk crystals, the nanowire geom...

Recently, germanium selenide (GeSe) has emerged as a promising van der Waals semiconductor for photovoltaics, solar light harvesting, and water photoelectrolysis cells. Contrary to previous reports claiming perfect ambient stability based on experiments with techniques without surface sensitivity, here, by means of surface-science investigations density functional theory, it is demonstrated tha...

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Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10 s originates from ...

As a promising electronic material, Ge nanowire (GeNW) has attracted much attention for its low band gaps, high mobilities, and unprecedented dimensions. This article reviews recent research and advancement on this topic and summarizes many aspects of GeNWs, including preparation, surface chemistry, physical properties, functional devices, and controlled assembly. It is shown that GeNWs can be ...

Molecular dynamics simulations are performed to investigate the buckling properties of [100]-, [110]-, [111]-, and [112]-oriented single-crystalline germanium nanowires under uniaxial compression. The effects of simulation temperature, strain rate, and wire length on the buckling behaviour are investigated. The simulation results indicate that critical load clearly decreases with increasing tem...

A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is demonstrated. The structural and chemical analysis reveals the homogeneous incorporation of ∼3.5 at. % Ga in the Ge nanowires. The Ga-containing Ge nanowires behave like metallic conductors with a resistivity of about ∼300 μΩcm due to Ga hyperdoping with electronic contributions of one-third of the incorporated...

Yoko Kawamura,3 Kevin C. Y. Huang,1 Shruti V. Thombare,1 Shu Hu,1 Marika Gunji,1 Toyofumi Ishikawa,3 Mark L. Brongersma,1,2 Kohei M. Itoh,3 and Paul C. McIntyre1,2,* 1Materials Science and Engineering, Stanford University, Stanford, California 94305 2Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 3School of Fundamental Science and Technology, Keio Uni...