نتایج جستجو برای: ge doped

تعداد نتایج: 67510  

2016
M. Gharsallah F. Serrano-Sánchez N. M. Nemes F. J. Mompeán J. L. Martínez M. T. Fernández-Díaz F. Elhalouani J. A. Alonso

Thermoelectric materials may contribute in the near future as new alternative sources of sustainable energy. Unprecedented thermoelectric properties in p-type SnSe single crystals have been recently reported, accompanied by extremely low thermal conductivity in polycrystalline samples. In order to enhance thermoelectric efficiency through proper tuning of this material we report a full structur...

2013
T. M. Libish George M Joseph

In this paper, the effects of temperature on the spectral profiles of long period grating (LPG) fabricated in BGe co doped photosensitive fiber is investigated. The results obtained show that LPG in a B–Ge co doped fiber has negative temperature response or opposite sign of the temperature dependence compared with LPG written in standard telecommunication fiber . Keywords— Fiber grating, Long P...

Journal: :Physical review letters 2013
S P Regan R Epstein B A Hammel L J Suter H A Scott M A Barrios D K Bradley D A Callahan C Cerjan G W Collins S N Dixit T Döppner M J Edwards D R Farley K B Fournier S Glenn S H Glenzer I E Golovkin S W Haan A Hamza D G Hicks N Izumi O S Jones J D Kilkenny J L Kline G A Kyrala O L Landen T Ma J J MacFarlane A J MacKinnon R C Mancini R L McCrory N B Meezan D D Meyerhofer A Nikroo H-S Park J Ralph B A Remington T C Sangster V A Smalyuk P T Springer R P J Town

Mixing of plastic ablator material, doped with Cu and Ge dopants, deep into the hot spot of ignition-scale inertial confinement fusion implosions by hydrodynamic instabilities is diagnosed with x-ray spectroscopy on the National Ignition Facility. The amount of hot-spot mix mass is determined from the absolute brightness of the emergent Cu and Ge K-shell emission. The Cu and Ge dopants placed a...

2016
L. Baldassarre E. Sakat M. Bollani A. Samarelli K. Gallacher J. Frigerio G. Pellegrini V. Giliberti A. Ballabio M. P. Fischer D. Brida G. Isella D. J. Paul M. Ortolani P. Biagioni

CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence ...

2013
Nicolas Abadia Papichaya Chaisakul Delphine Marris-Morini Laurent Vivien Jean-Claude Weeber

In this abstract we report on the design of a low energy consumption CMOS-compatible FranzKeldysh effect plasmonic modulator. The main characteristics of the modulator were determined using integrated electro-optical simulations. A 3.3 dB extinction ratio for a 30 μm long modulator was demonstrated under 3 V bias voltage at an operation wavelength of 1647 nm. The estimated energy consumption wa...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2010
E Palacios J A Rodríguez-Velamazán G F Wang R Burriel G Cuello J Rodríguez-Carvajal

Powder x-ray diffraction patterns of the doped compounds Gd(5)Si(2)Ge(1.9)M(0.1) (M = Ga, Cu) show the same crystal structure, orthorhombic Gd(5)Si(4)-type, in the ferromagnetic and paramagnetic phases. This is different from Gd(5)Si(2)Ge(2), whose paramagnetic phase is monoclinic. The magnetic structure at low temperature, solved from diffraction experiments with hot neutrons, is the same in a...

2013
Yan Cai Rodolfo Camacho-Aguilera Jonathan T. Bessette Lionel C. Kimerling Jurgen Michel

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The in situ n-type doping of Ge thin films epitaxial grown on Si substrates is limited to 1 Â 10 19 cm À3 by the ph...

Journal: :Optics express 2013
Sahar Hosseinzadeh Kassani Jiyoung Park Yongmin Jung Jens Kobelke Kyunghwan Oh

An in-line chemical gas sensor was proposed and experimentally demonstrated using a new C-type fiber and a Ge-doped ring defect photonic crystal fiber (PCF). The C-type fiber segment served as a compact gas inlet/outlet directly spliced to PCF, which overcame previous limitations in packaging and dynamic responses. C-type fiber was prepared by optimizing drawing process for a silica tube with a...

Journal: :High Temperature Materials and Processes 2020

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