A study to further simulation research of a commercial chemical vapor deposition (CVD) reactor is presented. A simulation is created using the computational fluid dynamics software package, Fluent (version 4). The variation of gas temperature inside the reactor system, as a function of gas flow rate, is examined. Data is collected for trials of several initial flow rates and iterations. Results...

The successful controlled growth of edge enriched 3D assemblies MoS 2 nanosheets for the fabrication dually selective NH 3 and NO gas sensors using a single step atmospheric pressure CVD method.

Ar/CH4/H2 gas mixtures have been used in an attempt to deposit nanocrystalline (NCD) diamond and ultra-nanocrystalline (UNCD) diamond films using hot filament (HF) chemical vapour deposition (CVD). A detailed composition map has been developed for the type of films deposited in the Ar/CH4/H2 system. It was found that the standard gas mixtures of 1%CH4/Ar (+1–2%H2) that are used successfully to ...

Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...

Chemical vapor deposition (CVD) of hexagonal boron nitride (hBN) using diborane (B2H6) and ammonia (NH3) is reported. The effect growth conditions on hBN rate continuous vs. flow modulation epitaxy (FME) method investigated to gain insight into the role gas-phase chemistry during film deposition. In mode, decreases with increase in temperature, reactor pressure, decrease gas velocity. This attr...

Self-assembled monolayers (SAMs) of alkylsiloxanes were patterned by microcontact printing @CP) on a number of substrates: A1/A1&, SUSi02, TiN/Ti02, glasses, indium tin oxide (ITO), and plasma-modified polyimide. The patterned SAMs on these surfaces define and direct the selective chemical vapor deposition (CVD) of copper using (hexafluoroacetylacetonato)(vinyltrimethylsilane)copper(I) (CuI(hfa...

Title of Document: MULTIPLEXED CHEMICAL SENSING AND THIN FILM METROLOGY IN PROGRAMMABLE CVD PROCESS. Yuhong Cai, Doctor of Philosophy, 2005 Directed By: Professor Gary W. Rubloff, Department of Materials Science and Engineering and the Institute for Systems Research Mass spectrometry (mass spec) has proven valuable in understanding and controlling chemical processes used in semiconductor fabric...