Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel jun...

Gallium nitride ~GaN! thin films with a wurtzite structure were grown on fused silica ~FS! substrates by pulsed laser ablation of a liquid gallium target in the presence of ammonia gas. X-ray diffraction measurement shows a single c-axis orientation for the GaN film grown with a thin ~,1000 Å! zinc oxide ~ZnO! film as an alignment layer. There is a great improvement in the surface morphology as...

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...

We report a study of the growth of iron nitride on gallium nitride using molecular beam epitaxy with Fe e-beam evaporation and rf N-plasma growth. Thin iron nitride layers of thickness about 16 nm were grown and monitored in-situ using reflection high energy electron diffraction. The samples following growth were analyzed ex-situ using a variety of techniques including x-ray diffraction, Ruther...

Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transis...

The first demonstration of a GaNbased blue laser diode by Shuji Nakamura [ ] was followed by a tremendous research and development effort around the world. Gallium nitride technology enables a range of novel applications with vast consumer markets. Examples are full-color video displays, solid-state lighting, and high-definition DVD players. However, there still remains a strong need for a more...

Ž . Ž . The growth of cubic aluminum nitride AlN and cubic gallium nitride GaN is studied. The effects of ambient pressure and substrate temperature on the structure of the AlN and GaN films are systematically investigated. It is shown that the films are amorphous when the temperature and the pressure are too low. Cubic AlN is obtained at a temperature of 8008C and a pressure of 0.2 Torr. Cubic...

We report the observation of room temperature lasing action in optically pumped GaN nanopillars. The nanopillars were fabricated by patterned etching and crystalline regrowth from a GaN substrate. When nanopillars were optically excited, a narrow emission peak emerged from the broad spontaneous emission background. The increasing rate is nine times faster than that of the spontaneous emission b...

We report a method to obtain the stress of crystalline materials directly from lattice deformation by Hooke's law. The lattice deformation was calculated using the crystallographic orientations obtained from electron backscatter diffraction (EBSD) technology. The stress distribution over a large area was obtained efficiently and accurately using this method. Wurtzite structure gallium nitride (...