The InAs/InGaAs dots-in-a-well (DWELL) structures were grown on both GaAs(311) B and (100) substrates by molecular beam epitaxy. Quantum dots (QDs) grown on GaAs(311) B substrate are of higher density and more uniform size distribution, yet QDs grown on GaAs(100) substrate demonstrate a bimodal size distribution. The growth mechanism of these surface morphologies was briefly discussed. We found...

The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy(MBE) h as 1 ,een measured. Pola,riza.tion as high as 49% was observed for a 0.2 pm thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for-a 0.9 pm thick GaAs sample. ‘*

A tribochemistry-assisted method has been developed for nondestructive surface nanofabrication on GaAs. Without any applied electric field and post etching, hollow nanostructures can be directly fabricated on GaAs surfaces by sliding a SiO2 microsphere under an ultralow contact pressure in humid air. TEM observation on the cross-section of the fabricated area shows that there is no appreciable ...

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non-ideal behavior of I–V characteristics with an ideality factor of 1.13 and barrier height of 0.735 eV. The forward bias saturation current was found to be large (3×10 A vs. ...

This work consists in a numerically evaluation of elastic fields distribution, caused by intrinsic dislocation networks placed at a nanometric trilayers interfaces, in order to estimate their influence on the surface topology during heterostructure operation. The organization of nanostructures is ensured by the knowledge of different elastic fields caused by buried dislocation networks and calc...

Infrared detectors can be used for a variety of applications such as: using in fiber-optic communications. Conventional technology for IR detectors is using p-i-n structure based on GaAs compound. This paper reports on the design and modeling of an IR detector using a p-i-n GaAs structure. Comsol software is used to simulate the model and the detector is discussed for terminal current, dopant p...

Boron arsenide, the typically-ignored member of the III–V arsenide series BAs–AlAs–GaAs– InAs is found to resemble silicon electronically: its Γ conduction band minimum is p-like (Γ15), not s-like (Γ1c), it has an X1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked...

Porous GaAs was prepared using electrochemical anodization technique of a cristalline GaAs wafer in hydrofluoridric (HF) acid based-solution at different manufacturing conditions. The physical properties of porous GaAs are mainly determined by the shape, diameter of pores, porosity, and the thickness of deposited porous layers. Depending on the etching parameters such as current density, HF con...

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted...

We present a comparative study of the growth of tensile-strained GaP on the four low-index surfaces of GaAs: (001), (110), (111)A, and (111)B. For each surface orientation we outline the growth conditions required for smooth GaAs homoepitaxy. We are able to predict the resulting surface morphology when GaP is deposited onto these four GaAs surfaces by considering the influence of surface orient...