This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electric...

In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity a...

We synthesized the uniform monoclinic gallium oxide (Ga2O3) nanobelts by a simple thermal annealing of GaN powders. The as-synthesized nanobelts were rectangular in cross-sectional shape with width ranging from 100 to 700 nm. The length direction of the nanobelt was along [010]. Photoluminescence measurement under excitation at 325 nm showed that the Ga2O3 nanobelts had a blue emission at aroun...

ZnO+Ga2O3 functionally graded thin films (FGTFs) were examined for their potential use as Solar cell and organic light emitting diodes (OLEDs). FGTF transparent conducting oxides (TCO) were fabricated by combinatorial RF magnetron sputtering. The composition gradient was controlled up to 10% by changing the plasma power of the two sputter guns. A Ga2O3+ZnO graded region was placed on the top la...

Nanophase of Ga2O3 has potentially important applications in photocatalysis. We report the synthesis of nanophase of the metastable cand stable b-Ga2O3 and demonstrate that it is possible to prepare a continuously varying mixture starting from the pure metastable cto the pure b-phase. This is achieved by employing a facile and reliable combustion route, using urea as a fuel. Typical grain sizes...

We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and unifor...

cofe/cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. nanowires with 30 nm diameter and the definite lengths were obtained. the effect of cofe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. the layers thickness was controlled t...

Thin film (15-130 nm) of gallium oxide were grown by the industry relevant metal organic chemical vapour deposition (MOCVD) technique on p-type Si to check the possibility for integration of newly rediscovered wide bandgap material with the Si technology. Electric, dielectric and optical properties were studied and analyzed. Тo perform electrical characterization, Ga2O3 films were integrated in...