نتایج جستجو برای: figure of merit fom

تعداد نتایج: 21167496  

پایان نامه :دانشگاه آزاد اسلامی - دانشگاه آزاد اسلامی واحد تهران مرکزی - دانشکده زبانهای خارجی 1391

the present study has tried to accomplish an analysis of margaret atwood’s novels oryx and crake, and the year of the flood in the light of posthuman and cyborg theories. considering posthumanism as a critical reading of some notions of humanism focus of which in this thesis has been identity, new definitions for humanity and human identity are formed. haraway’s cyborg, as one possible new figu...

Journal: :Solid-state Electronics 2021

In this paper, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality 0.26-nm roughness of the anode recessed surface. By using high work function metal Pt as electrode, low turn-on voltage 0.71 V is obtained uniformity ±0.023 for 40 devices. S...

2017
Qing-Qing Meng Xin Zhao Cheng-You Lin Shu-Jing Chen Ying-Chun Ding Zhao-Yang Chen

In this paper; the surface plasmon resonance (SPR) sensor with a porous silica film was studied. The effect of the thickness and porosity of the porous silica film on the performance of the sensor was analyzed. The results indicated that the figure of merit (FOM) of an SPR sensor can be enhanced by using a porous silica film with a low-refractive-index. Particularly; the FOM of an SPR sensor wi...

Journal: :Applied physics letters 2014
Lili Li Shujun Zhang Zhuo Xu Xuecang Geng Fei Wen Jun Luo Thomas R Shrout

The hydrostatic piezoelectric properties of [011] poled Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) crystals and corresponding 2-2 crystal/epoxy composites were investigated. The crystal volume ratio and compositional dependencies of the hydrostatic charge and voltage coefficients (dh and gh ) and hydrostatic figure of merit (FOM) dh  × gh were determined, where large FOM value of 3.2 pm2/N with high stab...

2013
I-Fan Chen Chin-Hui Lee

An HMM/DNN framework is proposed to address the issues of short-word detection. The first-stage keyword hypothesizer is redesigned with a context-aware keyword model and a 9state filler model to reduce the miss rate from 80% to 6% and increase the figure-of-merit (FOM) from 6.08% to 21.88% for short words. The hypothesizer is followed by a MLP-based second-stage keyword verifier to further redu...

2012
Toru Kamiyama Ken Murakami Haruo Kobayashi

This paper proposes a high frequency ring oscillator with low power consumption. The proposed ring oscillator is based on Gated Ring Oscillator (GRO) by applying boot strap technique. Simulation results indicate that the FoM (Power Consumption /Oscillation Frequency) of the proposed ring oscillator is greater than that of the conventional ring oscillator. Figure 1 shows delay element using boot...

Journal: :Plasmonics 2021

In this paper, we demonstrate a novel salinity sensor based on Tamm-plasmon-polariton (TPP), comprising different shapes of Bragg reflector (ordinary, texturing, and sawtooth) metallic layer. The finite element method is used to study the considered structure sensing performance by using COMSOL multiphysics simulation procedure. Here, effect surface morphology sensitivity; firstly, in case one-...

2014
Mohammad Elbadry Sachin Kalia Ramesh Harjani

A wide-tuning range QVCO with a novel complimentary-coupling scheme is presented. Two NMOS-only VCOs are coupled via complimentary PMOS injection transistors. This shifts the injection current away from the zerocrossings of the output voltage, thereby reducing the sensitivity of the VCO to injection noise, which results in significant phasenoise improvement. Phase-shift is achieved without freq...

2013
Hai Feng Zhou Kam Man Shum Ray C. C. Cheung Quan Xue Chi Hou Chan

A low phase noise CMOS complementary cross-coupled LC-tank voltage-controlled oscillator (VCO), implemented with TSMC 0.18μm 1P6M CMOS technology, is presented. Double pair pseudoresistance transistors biased by the tapped center of the inductor are utilized to reduce the DC bias current. The circuit consumes 1.55 mA from a 1.5 V supply voltage which saves up to 52.4% power, compared with the c...

Journal: :Silicon 2021

In this work, we design and simulate a high-performance vertical power MOSFET with charge balanced drift layer, which modulates the RON-BV relation from super quadratic to linear. The proposed device is designed junction layer has source channel regions isolated layer. This results in significant improvement performance of comparison other conventional devices, terms Balliga’s figure merit. A 2...

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