We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features channel above submicrometer-long wedge-like nanogap, is fulfilled by transferring ultraclean boron nitride-supported MoS 2 channels directly onto dielectric-spaced vertical source/drain stacks. Electr...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

Investigations of Tunneling for Field Effect Transistors

We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

The combination of their electronic properties and dimensions makes carbon nanotubes ideal building blocks for molecular electronics. However, the advancement of carbon nanotube-based electronics requires assembly strategies that allow their precise localization and interconnection. Using a scheme based on recognition between molecular building blocks, we report the realization of a self-assemb...

Novel type of a field effect transistor (FET) is described. A metallic channel of a metallic nanotube FET is proposed to be switched ON/OFF by applying electric fields of a local gate. Very inhomogeneous electric fields may lower the nanotube symmetry and open a band gap, as shown by tight–binding calculations.