With the introduction of 157 nm as the next optical lithography wavelength, the need for new pellicle and photoresist materials optimized for this wavelength has produced much activity in optical characterization of thin film materials. Here we focus on ultratransparent fluoropolymers for 157 nm pellicle applications where absorbances below 0.01/μm are necessary to achieve transmissions above 9...

This paper discusses the fundamentals, applications, potential and limitations of polarized light reflection techniques for characterization phase-change materials (PCMs). These include spectroscopic ellipsometry, time-resolved ellipsometry imaging as well polarimetry. We explore capabilities in determination extinction coefficient PCMs to characterize PCMs. show that is capable more than thick...

Design and Simulation of Graphene/2D Interlayer Surface Plasmon Resonance Biosensor Based on Ellipsometry Method

The successful synthesis of amylose brushes via enzymatic "grafting from" polymerization and the detailed characterization of all synthetic steps by X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry measurements are reported. Au and Si surfaces are amino-functionalized with self-assembled monolayers (SAMs) of cystamine and 3-aminopropyldimethyethoxysilane (APDMES), respectiv...

Random sample selection method in backpropagation results in convergence on the error (root of mean squared error, RMSE) surface. These problems, which are caused by the extreme (worst-case) errors, can be solved by a different sample selection strategy. A sample selection strategy has been proposed, which provides lower maximal errors and a higher confidence level on the expense of slightly in...

The influence of ion bombardment on the structure of the silicon lattice has been the subject of numerous investigations. The various effects induced by low energy ion bombardment in the outer layers of a solid lattice damage, ion implantation, surface roughness, sputtering and surface state changes are reflected in changes of the complex dielectric constant Z, which can be measured by means of...