Using a three-dimensional semiclassical model, we study double ionization for strongly driven He fully accounting for magnetic field effects during the propagation in time. For linearly and slightly elliptically polarized laser fields, we show that recollisions and the magnetic field combined act as a gate. This gate favors more transverse—with respect to the electric field— initial momenta of ...

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0 4Ge0 6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily usi...

In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significa...

In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation channel field formation. Further, internal gate's threshold voltage ( V TH1 ) could be reduced compared external TH2 by arranging work-function Double devices. Therefore, device CSDG realized instigat...

Abstract This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The membrane enhanced the single-gate (SG) sensitivity, and suppressed hysteresis. DG structure was preferred to have capacitive coupling effect amplify sensitivity of ISFETs. sensitivities SG- DG-ISFETs were appr...

This paper present the electron charge pumping technique using the various charge pumps circuits for interface trap density and edge leakage reduction that is major concern in GAA short channel nanowire structure. Latched and bootstrap charge pump circuit has been simulated and analyzed for GAA structure. The charge pumping technique requires body contact of FET which has been implemented for G...

In this paper modeling framework for single gate conventional planar MOSFET and double gate (DG) MOSFETS are reviewed. MOS Modeling can be done by either analytical modeling or compact modeling. Single gate MOSFET technology has been the choice of mainstream digital circuits for VLSI as well as for other high frequency application in the low GHZ range. The major single gate MOS modeling methods...

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...

Starting with a brief review on 0.1m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number f...