The electronic structure and binding energy of a hydrogenic acceptor impurity in 2, 1, and 0-dimensional semiconductor nano-structures (i.e. quantum well (QW), quantum well wire (QWW), and quantum dot (QD)) are studied in the framework of effective-mass envelopefunction theory. The results show that (1) the energy levels monotonically decrease as the quantum confinement sizes increase; (2) the ...

In this paper, the effect of pressure, temperature and impurity on the energylevels, binding energy, linear and nonlinear optical properties of a modified Gaussianquantum dot are studied. In this regard, the finite element method is employed to solvethe single electron Schrodinger equation in the effective mass approximation with andwithout impurity at the center of the dot. In addition, the en...

TiO2−δ films were deposited on (100) lanthanum aluminate, LaAlO3, substrates at a low oxygen chamber pressure, P ≈ 0.3 mTorr, employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion i...

The charge state of individually addressable impurities in semiconductor material was manipulated with a scanning tunneling microscope. The manipulation was fully controlled by the position of the tip and the voltage applied between tip and sample. The experiments were performed at low temperature on the (110) surface of silicon doped GaAs. Silicon donors up to 1 nm below the surface can be rev...

The effects of microwave {MW) irradiation on photoexcited free and donor-bound electrons are studied in semi-insulating, bulk GaAs in the temperature range of 2—20 K. The main observations are as follows: an abrupt increase in the photoinduced microwave absorption (PMA), a concurrent decrease of the donor-acceptor pair photoluminescence and self-oscillations in the PMA when the incident MW powe...

We present a direct spectroscopic observation of a shallow hydrogenlike muonium state in SrTiO(3) which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below ∼ 70K. From the temperature dependence we estimate an activation energy of ∼ 50 meV in the bulk and ∼ 23 m...