نتایج جستجو برای: dimensional fet model

تعداد نتایج: 2410851  

2018
Antoine Verger Carina Stegmayr Norbert Galldiks Axel Van Der Gucht Philipp Lohmann Gabriele Stoffels Nadim J. Shah Gereon R. Fink Simon B. Eickhoff Eric Guedj Karl-Josef Langen

PET using the amino-acid O-(2-18F-fluoroethyl)-l-tyrosine (18F-FET) is gaining increasing interest for brain tumour management. Semi-quantitative analysis of tracer uptake in brain tumours is based on the standardized uptake value (SUV) and the tumour-to-brain ratio (TBR). The aim of this study was to explore physiological factors that might influence the relationship of SUV of 18F-FET uptake i...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه مازندران - دانشکده علوم پایه 1386

چکیده ندارد.

2016
Saurabh V. Suryavanshi Eric Pop

We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical expressions for the drain current. In addition to intrinsic FET behavior, the model includes contact resistance, traps and impurities, quantum capaci...

Journal: :Clinical science and molecular medicine 1976
N K Burki M C Dent

1. In five subjects, ten consecutive forced expiratory spirograms were recorded on each of 6 different days and the total forced expiratory time (FET) on each spirogram was measured. The mean overall coefficient of variation of the FET was 11.3% and of the ratio forced vital capacity (FVC)/FET was 8%. 2. Twenty-two subjects with probable small (less than 2 mm diameter) airway dysfunction as man...

2016
Kexiong Zhang Masatomo Sumiya Meiyong Liao Yasuo Koide Liwen Sang

The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a d...

Background & aim: There are conflicting results regarding the benefit of gonadotropin releasing hormone (GnRH) agonist treatment on frozen embryo transfer (FET) outcome. No study was found to compare pregnancy outcome between patients undergoing short and long acting types of GnRH agonist for FET cycles. This study aimed to assess the effectiveness of short and long ac...

2004
S. Wood R. Pengelly

Last month, Part 1 of this article introduced the new CMC (Curtice/Modelithics/Cree) non-linear LDMOS FET transistor model. The CMC model was described, and its utility demonstrated by making extractions on a 1 watt wafer-probeable FET. In Part 2, this device is used as the core of a 30 watt model to show the scalability to larger devices. The 30 watt model is built up by adding appropriate pac...

Journal: :Nanoscale 2017
Amirhasan Nourbakhsh Ahmad Zubair Sameer Joglekar Mildred Dresselhaus Tomás Palacios

Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec-1 by exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel effective technique to allow the reduction of the supply voltage and power consumption in field effect transistors (FETs). At the same time, two-dimensional layered semiconductors, such as molybdenum disulfide (MoS2), have be...

Journal: :Human reproduction 2006
Ernest Hung Yu Ng Carina Chi Wai Chan Oi Shan Tang William Shu Biu Yeung Pak Chung Ho

BACKGROUND A good blood supply to the endometrium is usually considered as an essential requirement for implantation. OBJECTIVE The aim of this study was to evaluate the role of endometrial and subendometrial vascularity in the prediction of pregnancy during frozen-thawed embryo transfer (FET) cycles. METHODS Women undergoing FET in natural or clomiphene-induced cycles after the first stimu...

2006
Adam K. Wanekaya Wilfred Chen Nosang V. Myung Ashok Mulchandani

We review recent advances in biosensors based on one-dimensional (1-D) nanostructure field-effect transistors (FET). Specifically, we address the fabrication, functionalization, assembly/alignment and sensing applications of FET based on carbon nanotubes, silicon nanowires and conducting polymer nanowires. The advantages and disadvantages of various fabrication, functionalization, and assemblin...

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