We analyze coherent anti-Stokes Raman scattering in thin-film dielectric waveguides. Extraordinarily large signal levels are predicted, and two applications of this phenomenon are discussed.

The basic optical properties and optical constants of the ionomer thin film have been investigated by means of transmittance and reflectance spectra. The real (n) and imaginary (k) parts of the complex refractive index and dielectric constant of the thin film were determined. The oscillator energy Eo, dispersion energy Ed and other parameters have been determined by the Wemple– DiDomenico metho...

The effects of dielectric-annealing gas (O2, N2 and NH3) on the electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric are studied in-depth, and improvements in device performance by the dielectric annealing are observed for each gas. Among the samples, the N2-annealed sample has a high saturation carrier mobility of 35.1 cm 2 /V∙s, the lowest subthresho...

Lead zirconate titanate ~PZT! thin films with a Zr/Ti ratio of 52/48 were deposited on platinized silicon substrates by a sol-gel method and crystallized with preferred ~111! or ~100! orientation. Both the piezoelectric properties (d33) and the field-induced strains of the films with different thickness and preferred orientation were measured by a laser Doppler heterodyne interferometer. The we...

Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virt...

Lead zirconate titanate (Pb(1.1)(Zr(0.52)Ti(0.48))O(3)) thin films of thickness 260 nm on Pt/Ti/SiO(2)/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 °C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 °C and the film was fully crystalliz...

The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate ...

High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.

In this study, the effects of fluorine treatment on surface properties, surface free energies, and dielectric constants of polyimide thin films were studied using X-ray photoelectron spectroscopy, contact angles, and dielectric characteristics, respectively. The glass transition temperature of fluorinated polyimide film gradually decreases with increasing fluorine pressure. The surface free ene...

The optical transmissivity of a mirrorless, nonlinear, absorbing dielectric thin film is investigated numerically. The dielectric function in the film region is dependent on the intensity of the electromagnetic field. Multivalued solutions of transmissivity as a function of incident power are calculated for the steady-state wave equation. The numerical solution is applied to two different model...