A high contrast electroluminescent (EL) device structure is presented. The diffuse luminous reflectivity from the metal/dielectric/phosphor/indium-tin-oxide/glass EL device structure is 3%. A Eu-doped GaN phosphor is used to demonstrate the contrast-enhanced operation. Low reflectivity is achieved by inserting a light-absorbing black thick-film BaTiO3 layer between the phosphor and the rear met...

The electronic, and optical properties of rhombohedral Na0.5Bi0.5TiO3nanostructured thin film have been studied by the first–principle approach. Densityfunctional theory (DFT) has been employed to calculate the fundamental properties ofthe layers using full–potential linearized augmented plane–wave (FPLAPW) method. A2×2×1 supercell was constructed with two vacuum slabs o...

Thin film supercapacitors are produced by using electrochemically exfoliated graphene (G) and wet-chemically produced graphene oxide (GO). Either G/GO/G stacked film or sole GO film are sandwiched by two Au films to make devices, where GO is the dielectric spacer. The addition of graphene film for charge storage can increase the capacitance about two times, compared to the simple Au electrode. ...

Ti1-xSixO2 dielectric thin films were prepared by cosputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenk...

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V(-1) s(-1), ...

Nano-composite films have been the subject of extensive work for developing the energy-storage efficiency of electrostatic capacitors. Factors such as polymer purity, nanoparticle size, and film morphology drastically affect the electrostatic efficiency of the dielectric material that forms the insulating film between the conductive electrodes of a capacitor. This in turn affects the energy sto...

HHigh-k LaAlO3 (LAO) thin films with and without Al2O3 buffer layers were deposited on n-type silicon substrates using a pulsed laser deposition method. The dielectric constant of the LAO thin film increased from 5.2 to 23.1 as its thickness increased from 20 to 500 Å. The effective dielectric constants of the LAO (120 Å)/Si and LAO(105 Å)/Al2O3(15 Å)/Si were 12.5 and 23.2, respectively. The fl...

Organic-based flexible dielectric films with high permittivity (e) are desirable for future applications of organic thin-film transistors, such as smartcards and radio frequency identification (RFID) tags, that concurrently desire flexible or conformable substrates. Advances in the development of all-polymer field-effect transistors (PFETs) have been particularly significant for their potential...

Efficient light management in optoelectronic devices requires nanosystems where high optical qualities coincide with suitable device integration. The requirement of chemical and electrical passivation for integrating nanostrutures in e.g. thin film solar cells points towards the use of insulating and stable dielectric material, which however has to provide high scattering and near-fields as wel...

Surface plasmon (SP) coupling has been successfully applied to nonradiative energy transfer via exciton-plasmon-exciton coupling in conventionally sandwiched donor-metal film-acceptor configurations. However, these structures lack the desired efficiency and suffer poor photoemission due to the high energy loss. Here, we show that the cascaded exciton-plasmon-plasmon-exciton coupling in stratifi...