Measurements of difference in optical interactions between circularly polarized excitations opposite handedness (circular dichroism) are highly important for both natural and artificial chiral structures. Here the photothermal deflection technique is proposed as a method to detect chirality metasurface, analyzing diffracted beams by metasurface itself. Two metasurfaces investigated, based on Au...

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p–i–n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1 xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barri...

In this work, we present a plasmonic photodetector (PPD) with high sensitivity to red light illumination. The ultrasensitive PPD was composed of high-crystalline CdSe nanoribbons (NRs) decorated with plasmonic hollow gold nanoparticles (HGNs) on the surface, which were capable of coupling the incident light due to localized surface plasmon resonance (LSPR). Device analysis reveals that after mo...

The authors report on an InP based photovoltaic quantum cascade detector operating at 16.5 m and using miniband-based vertical transport. This concept allowed the construction of a longitudinal optical phonon extraction stair with two rungs without touching on a high device resistance. At 10 K, they observed a responsivity of 1.72 mA/W and a Johnson noise limited detectivity of 2.2 109 Jones. A...

The growth of FA-based mixed halide perovskite single-crystal via the ITC method has been investigated and characterized to detect its photosensitive properties. photophysical, responsivity detectivity also investigated.

A perovskite photodetector with bio-inspired micro area concentrated structures has been fabricated for weak light imaging. The exhibits high detectivity (1.37 × 10 13 Jones), and it can achieve imaging under 0.64 μW cm −2 .

We report on the demonstration of high-performance p-i-n photodiodes based on type-II InAs/ GaSb superlattices with 50% cut-off wavelength lc516 mm operating at 80 K. Material is grown by molecular beam epitaxy on GaSb substrates with excellent crystal quality as evidenced by x-ray diffraction and atomic force microscopy. The processed devices show a current responsivity of 3.5 A/W at 80 K lead...