نتایج جستجو برای: conduction band
تعداد نتایج: 169120 فیلتر نتایج به سال:
A tight-binding-based microscopic theory is developed that accounts for quasilinear conduction bands appearing commonly in transparent conducting oxides. It is found that the interaction between oxygen p and metal s orbtials plays a critical role in determining the band structure around the conduction-band minimum. Under certain types of short-range orders, the tight-binding model universally l...
We present a quantitative conduction model for nonalloyed ohmic contacts to n-type GaAs ~n:GaAs! which employ a surface layer of low-temperature-grown GaAs ~LTG:GaAs!. The energy band edge profile for the contact structure is calculated by solving Poisson’s equation and invoking Fermi statistics using deep donor band and acceptor state parameters for the LTG:GaAs which are consistent with measu...
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this Letter, we demonstrate a clear transition from spin accumulation into interface...
We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of μ ∼ 4 × 10(5) cm(2)/V · s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and...
The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO3 (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scanning transmission electron microscopy with geometric phase analysis is used to resolve strain at atomi...
We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polar...
Several theoretical electronic structure methods are applied to study the relative energies of the minima of the Xand L-conduction-band satellite valleys of InxGa1 xAs with x1⁄4 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxidesemiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge govern...
We report the spin-selective optical excitation of carriers in inversion-symmetric bulk samples of the transition metal dichalcogenide (TMDC) WSe_{2}. Employing time- and angle-resolved photoelectron spectroscopy (trARPES) and complementary time-dependent density functional theory (TDDFT), we observe spin-, valley-, and layer-polarized excited state populations upon excitation with circularly p...
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