Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 μm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macrop...

Infrared (IR) and Raman spectroscopy are useful techniques for characterizing hydrogen-related defects in semiconductors. This paper will focus on hydrogen in compound semiconductors such as AlSb, GaAs, GaN, InP, and ZnO. In most compound semiconductors studied to date, hydrogen forms neutral complexes with donors or acceptors. In GaN:Mg grown by metalorganic chemical vapor deposition, for exam...

Limiting factors for the growth rate of epitaxial III-V compound semiconductors are investigated. A model based on two connected diffusion equations group III and V adatoms applies planar layers different nanostructures including nanowires. An expression step is obtained a physical parameter revealed which determines an element actually limits process. Keywords: semiconductors, surface adatoms,...