نتایج جستجو برای: cntfet

تعداد نتایج: 191  

2013
Sameer Prabhu Nisha Sarwade

Carbon Nanotube Field Effect Transistors (CNTFET) are promising nanoscaled devices for implementing high performance, very dense and low power circuits. Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel known as SBCNFET. When the gate oxide thickness is reduced, such transistors display strong ambipolar conductio...

Carbon nanotube field effect transistors (CNTFETs), are considered as a proper candidate to improve the silicon transistor performance at short channel regime. In this paper a novel CNTFET with lightly doped channel and dual section dielectric (LIC-DSD-CNTFET) is proposed. This structure is compared with conventional (C-CNTFET) and dual section dielectric (DSD) structures with similar dimension...

Journal: :International Journal of Computer Applications 2012

Journal: :Electronics 2022

Multiply-Accumulate (MAC) is one of the most commonly used operations in modern computing systems due to its use matrix multiplication, signal processing, and new applications such as machine learning deep neural networks. Ternary number system offers higher information processing within same digits when compared binary systems. In this paper, a MAC proposed using CNTFET-based ternary logic num...

Journal: :International Journal of Engineering Applied Sciences and Technology 2020

In this article different types of artificial neural networks (ANN) were used for CNTFET (carbon nanotube transistors) simulation. CNTFET is one of the most likely alternatives to silicon transistors due to its excellent electronic properties. In determining the accurate output drain current of CNTFET, time lapsed and accuracy of different simulation methods were compared. The training data for...

Journal: :International Journal of VLSI Design & Communication Systems 2013

Journal: :Microelectronics Journal 2023

This paper presents three new power-efficient designs of ternary SRAM using carbon-nanotube-field-effect-transistors (CNTFETs). Two the proposed are cycle-operator based and third design is buffer-based. The cycle operators buffer used in consume low power as they use two supplies for operation. Ternary logic implementation CNTFETs largely being lately due to advantages it provides terms reduce...

2014
Akshay Verma Harshul Gupta Nitin Chaturvedi

Since the last few decades the siliconbased technology has escalated remarkably. The reason behind the exceptional advancement of the CMOS devices is acknowledged due to its potential of being scaled down to increasingly compact sizes. However, the excessive scaling of CMOS devices to the Nano ranges have resulted in several non-idealities affecting the I/V characteristics and increased short c...

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