A source-series-terminated (SST) transmitter in a 65 nm bulk CMOS technology is presented. The circuit exhibits an eye height greater than 1.0 V for data rates of up to 8.5 Gb/s. A thin-oxide pre-driver stage running at 1.0 V drives 22 parallel connected thick-oxide SST output stages operated at 1.5 V that feature a 5-bit 2-tap FIR filter whose adaptation is independent of the impedance tuning....

This paper presents an ultra-low-power single-chip sensor-node VLSI for wireless-sensor-network applications. A communication centric design approach has been introduced to reduce the power consumption of the RF circuits and the entire sensor network system, through a vertical cooperative design among circuits, architecture, and communication protocols. The sensor-node LSI features a synchronou...

On-chip spiral micromachined inductors fabricated in a 0.18m digital CMOS process with 6-level copper interconnect and low-K dielectric are described. A post-CMOS maskless micromachining process compatible with the CMOS materials and design rules has been developed to create inductors suspended above the substrate with the inter-turn dielectric removed. Such inductors have higher quality factor...

Inverter-based Operational Transconductance Amplifiers (OTAs) are versatile and friendly scalable analog circuit blocks. Especially for the new CMOS technological nodes, several recent applications have been extensively using them, ranging from Analog Front End (AFE) to analog-to-digital converters (ADC). This work tracks down current advances in inverter-based OTAs design, comparing their basi...

Magnesium alloys have broad applications, including medical implants and the aerospace sector owing to their great density high strength-to-weight ratio. Dry cutting is a frequent technique for machining this material. However, it always leads an excessive rise in temperature due absence of cooling at zone, which affects machined surface integrity chip morphology. In study, morphology AZ31 magn...

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon ph...