Vertically aligned carbon nanotubes were selectively grown at temperatures as low as 120 8C by plasma enhanced chemical vapour deposition. We investigated the effects of acetylene, ethylene and methane as carbon source gases together with ammonia as an etchant and nickel as catalyst material. The diluted acetylene plasma gave the highest nanotube growth rate and showed the most intense C Swan b...

Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the e...

Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E150.23460.006, E250.57860.006, E350.65760.031, E450.96160.026, and E550.24060.012 eV. Among these, the levels labeled E1 , E2 , and E3 are interpreted as corresponding to deep levels...

We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectr...

The rapid thermal direct deposition of micro-crystalline silicon (μc-Si) layers by atmospheric pressure chemical vapour deposition (APCVD) can be done on different intermediate layers and on various substrates. The deposition is done at temperatures between 850 °C and 1150 °C. A deposition rate of 1.6 μm/min has been achieved using standard process conditions. The microcrystalline structure cha...

Abnormal anti-pyramid MoS2/WS2 vertical heterostructures were synthesized by a facile single-step chemical vapour deposition.

A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child's law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing she...

In this paper the design of a simple, space constrained chemical vapour deposition reactor for diamond growth is detailed. Based on the design by NIRIM, the reactor is composed of a quartz discharge tube placed within a 2.45 GHz waveguide to create the conditions required for metastable growth of diamond. Utilising largely off-the-shelf components and a modular design, the reactor allows for ea...

The growth of graphene on Ni using a photo-thermal chemical vapour deposition (PT-CVD) technique is reported. The non-thermal equilibrium nature of the PT-CVD process resulted in a much shorter duration of the overall growth time for graphene in both the heating up and cooling down stages, thus allowing for the reduction. Despite the reduced time for synthesis compared to standard thermal chemi...