We demonstrate the possibility of fabricating an infrared transmitting waveguide by burying fiber in chalcogenide glasses. Two highly mature chalcogenide glasses are used for these experiments. GASIR glass from Umicore IR Glass, Olen, Belgium, with the composition of Ge(22)As(20)Se(58) is used to draw fibers that are then buried in an As(2)S(3) glass substrate. The glasses we used are compatibl...

This paper reviews ongoing progress in the design and fabrication of new, on-chip, low loss planar molecular sensors. We report the details of device design, material selection and manufacturing processes used to realise high-index-contrast (HIC), compact micro-disk resonators. These structures have been fabricated in thermally evaporated Asand Ge-based chalcogenide glass films with PDMS (polyd...

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CHALCOGENIDE SOL GEL ASSEMBLY: CONTROLLING THE KINETICS OFNANOCRYSTAL AGGREGATION AND FILM FORMATION FOR APPLICATIONSIN OPTOELECTRONICSby

We have investigated electrical properties of a chalcogenide-based device with naturally oxidized Al electrodes. Intermediate-resistance (IR) states exhibited by current–voltage (I–V) characteristics, dynamic resistance change as a function of pulse height and decay behavior from a low-resistance state of such a device make multi-state storage feasible. These IR states could be induced by elect...

Chalcogenide (As(2)S(3)) nanofibers as narrow as 200 nm in diameter are drawn by the fiber pulling method, are successfully embedded in SU8 polymer, and form on-chip waveguides and high-Q microknot resonators (Q = 3.9 × 10(4)) with smooth cleaved end faces. Resonance tuning of resonators is realized by localized laser irradiation. Strong supercontinuum generation with a bandwidth of 500 nm is a...

A compact model and simulation methodology for chalcogenide based memristor devices is proposed. From a microprocessor design view point, it is important to be able to simulate large numbers of devices within the integrated circuit architecture in order to speed up reliably the development process. Ideally, device models would accurately describe the characteristic device behavior and would be ...

A thermal reflow technique is applied to high-index-contrast, sub-micron waveguides in As(2)S(3) chalcogenide glass to reduce the sidewall roughness and associated optical scattering loss. We show that the reflow process effectively decreases sidewall roughness of chalcogenide glass waveguides. A kinetic model is presented to quantitatively explain the sidewall roughness evolution during therma...

Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and NIR photoluminescence (PL) bands result from Bi(2+) and Bin clusters, respectively. Very similar centers are present in Bi- and Pb-doped oxide and chalcogenide glasses. Bi-implanted and Bi melt-doped chalcogenide glasses display new PL bands, indicating that new Bi centers are formed. Bi-related ...

Optical nonlinearity can be enhanced by the combination of highly nonlinear chalcogenide glass and photonic crystal waveguides (PCWs) providing strong optical confinement and slow-light effects. In a Ag-As(2)Se(3) chalcogenide PCW, the effective nonlinear parameter γeff reaches 6.3 × 10(4) W(-1)m(-1), which is 200 times larger than that in Si photonic wire waveguides. In this paper, we report t...