نتایج جستجو برای: carrier relaxation time

تعداد نتایج: 2005455  

2015
Marcus L. Böhm Tom C. Jellicoe Maxim Tabachnyk Nathaniel J. L. K. Davis Florencia Wisnivesky-Rocca-Rivarola Caterina Ducati Bruno Ehrler Artem A. Bakulin Neil C. Greenham

Multiple exciton generation (MEG) in semiconducting quantum dots is a process that produces multiple charge-carrier pairs from a single excitation. MEG is a possible route to bypass the Shockley-Queisser limit in single-junction solar cells but it remains challenging to harvest charge-carrier pairs generated by MEG in working photovoltaic devices. Initial yields of additional carrier pairs may ...

2015
Liang Guo Xianfan Xu James R. Salvador

Carrier dynamics of filled-skutterudites, an important class of thermoelectric materials, is investigated using ultrafast optical spectroscopy. By tuning the wavelength of the probe laser, charge transfers at different electronic energy levels are interrogated. Analysis based on the KramersKronig relation explains the complex spectroscopy data, which is mainly due to band filling caused by phot...

Journal: :Nature materials 2009
E A Zibik T Grange B A Carpenter N E Porter R Ferreira G Bastard D Stehr S Winnerl M Helm H Y Liu M S Skolnick L R Wilson

Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot excited-state lifetimes. For example, the population inversion required for terahertz laser operation in qu...

Journal: :علوم و تکنولوژی پلیمر 0
نادر طاهری قزوینی

the molecular weight distribution of 4 commercial isotactic polypropylene (ipp) samples was estimated using rheological data. the dynamic moduli data, obtained from rheological measurements in linear viscoelastic region was used for calculation of relaxation time spectrum, h(τ) and then shear relaxation modulus, g(t). finally, applying thimm kernel function and relaxation modulus data in genera...

2005
G. D. Sanders C. J. Stanton J. Kono H. Munekata

We present detailed theoretical calculations of two color, time-resolved pump-probe differential reflectivity measurements. The experiments modeled were performed on InxMn1−xAs/GaSb heterostructures and have shown pronounced oscillations in the differential reflectivity as well as a time-dependent background signal. Previously, we showed that the oscillations resulted from a generation of coher...

2011
Brian A. Ruzicka Nardeep Kumar Shuai Wang Kian Ping Loh Hui Zhao

The energy relaxation of carriers in reduced graphene oxide thin films is studied using optical pump-probe spectroscopy with two probes of different colors. We measure the time difference between peaks of the carrier density at each probing energy by measuring a time-resolved differential transmission and find that the carrier density at the lower probing energy peaks later than that at the hig...

1999
H. Linke B. K. Meyer M. Drechsler C. Wetzel F. Scholz

Microwave detection of the Shubnikov-de Haas (SdH) effect as a contact-free characterization technique for different types of two-dimensional semiconductor structures is explored in the low magnetic field region. The detection technique and the data analysis are described. The character and relevance of the single-particle relaxation time that can be detected by this technique are distinguished...

2013
Jeffrey P. Bosco Gregory M. Kimball Nathan S. Lewis Harry A. Atwater

Tetragonal zinc phosphide (a-Zn3P2) was grown pseudomorphically, by compound-source molecularbeam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn3P2(004):GaAs(002) and Zn3P2(202):GaAs(111). Partial relaxation of the Zn3P2 lattice was observed for films that were 4150 nm in thickness. Van der Pauw and Hall effect measurements indicated that carrier mo...

2002
K. Kim J. Urayama T. B. Norris P. Bhattacharya

Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In~Ga!As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to...

Journal: :Physical chemistry chemical physics : PCCP 2009
Marco Califano

The experimental determination of the carrier multiplication (CM) time constant is complicated by the fact that this process occurs within the initial few hundreds of femtoseconds after excitation and, in transient-absorption experiments, cannot be separated from the buildup time of the 1p-state population. This work provides an accurate theoretical determination of the electron relaxation life...

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