Surface passivation and bulk carrier lifetime of silicon nanowires (SiNWs) are essential for their application in solar cell devices. The effective minority carrier lifetime of a semiconductor material is influenced by both its surface passivation and bulk carrier lifetime. We found that the effective carrier lifetime of SiNWs passivated with aluminum oxide (Al2O3) was significantly influenced ...

The Auger and radiative combination carrier lifetimes in HgCdTe bulk and quantum-well structures, with band gaps in the wavelength range 2-5 pm, are calculated. The Auger recombination rate in a HgCdTe quantum well (QW) is shown to be significantly smaller than that in bulk material. Threshold current densities of HgCdTe double-heterostructure (DH) and multiquantum-well (MQW) lasers are calcula...

Polycrystalline samples of Ca3Al1 xZnxSb3, with x 1⁄4 0.00, 0.01, 0.02, and 0.05 were synthesized via a combined ball milling and hot pressing technique and the influence of zinc as a dopant on the thermoelectric properties was studied and compared to the previously reported transport properties of sodium-doped Ca3AlSb3. Consistent with the transport in the sodium-doped material, substitution o...

Previous publications have shown that the absorption coefficient of silicon in the near infrared depends on the carrier concentration of the material considered. Consequently, determination of the absorption coefficient enables the carrier concentration to be deduced. Unfortunately the absorption is generally small for the doping levels used in integrated circuits, and therefore normal absorpti...

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a...

method previously employed by westoo for the determination of alkylmercury compounds was producing very wide picks during g.c. analyses. changing the column temperature, carrier gas flow and pressure did not supersede the problem. therefore change in packing materials was experienced. 5% dc-200 on gas-chrom did not work. a packing material used for chlorinated hydrocarbons w, 80-100 mesh. as th...

We report an experimental study on terahertz THz emission from Ga1−xInxSb with 0 x 1. THz emission is excited by femtosecond near-infrared laser pulses. For this material system THz emission is maximized for an In mole fraction x 0.5. The maximum in THz emission occurs as a result of carrier compensation NA NB for this specific material composition. The THz emission from n-type InSb is twice as...

This paper shows the scattering mechanism at diluted magneticsemiconductors. The doped magnetic atom produces a scattering potential due to becoupled of itinerant carrier spin of host material with magnetic momentum of the dopedmagnetic atom. Formulas of scattering event were rewritten by the plane waveexpansion and then the electron mobility of DMS was calculated. Calculations showKondo effect...

An integrated system of a microreformer and a carrier allowing for syngas generation from liquefied petroleum gas (LPG) for micro-SOFC application is discussed. The microreformer with an overall size of 12.7 mm × 12.7 mm × 1.9 mm is fabricated with micro-electro-mechanical system (MEMS) technologies. As a catalyst, a special foam-like material made from ceria-zirconia nanoparticles doped with r...