We present a novel nanotube-on-insulator (NOI) approach for producing high-yield nanotube devices based on aligned single-walled carbon nanotubes. First, we managed to grow aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which bear analogy to industry-adopted silicon-on-insulator substrates. On the basis of the nanotube arrays, we demonstrated reg...

s of Papers of the American Chemical Society, vol. 227,pp. U266-U266, 2004.[52] J. Appenzeller and D. J. Frank, "Frequency dependent characteri-zation of transport properties in carbon nanotube transistors," Ap-plied Physics Letters, vol. 84, pp. 1771-1773, 2004.[53] D. J. Frank and J. Appenzeller, "High-frequency response in car-bon nanotube field-effect transistors," I...

In situ three terminal electron field emission characterization of an isolated multiwalled carbon nanotube has been performed, where both anode and gate electrodes are attached to high precision piezodrivers. All measurements are performed in a scanning electron microscope allowing accurate knowledge of the local environment of the nanotube to be obtained. It is shown that the presence of the g...

The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. This property has generated interest for their application in sensing gases, chemicals and biomolecules. With over a decade of research, a clearer picture of the interactions between the carbon nanotube and its surroundings has been achieved. In this review, we intend to summariz...

Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the ...

Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing silicon technology. Although theoretical studies have projected that nanotube transistors will perform well at nanoscale device dimensions, most experimental studies have been carried out on devices that are about ten times larger than current silicon transistors. Here, we show that nanotube transistors...

In the last years carbon nanotubes have attracted increasing attention for their potential applications in the biomedical field as diagnostic and therapeutic nano tools. Here we investigate the antimicrobial activity of different fully characterized carbon nanotube types (single walled, double walled and multi walled) on representative pathogen species: Gram-positive Staphylococcus aureus, Gram...

Carbon nanotubes are nanocomponents par excellence that offer unique properties to be exploited in next-generation devices. Sensing applications are perhaps the class that has most to gain from single-walled carbon nanotubes (SWNTs); virtually any property of SWNTs (e.g., electronic, electrical, mechanical, and optical) can result or has already resulted in sensor concept demonstrators. The bas...

We determine optical absorption cross sections of single-wall carbon nanotubes for visible light copolarized and cross polarized with respect to the nanotube axis. The need for perfectly aligned ensembles in absorbance measurements is eliminated by using Raman scattering to measure the nematic order parameter in magnetically aligned nanotube suspensions. The absorbance data allow the first quan...

When a carbon nanotube emitter is operated at high currents (typically above 1 microA per emitter), a small voltage drop ( approximately few volts) along its length or at its contact generates a reverse/canceling electric field that causes a saturation-like deviation from the classical Fowler-Nordheim behavior with respect to the applied electric field. We present a correction to the Fowler-Nor...