In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in InxGa1−xAs FinFET with varying Indium (x = 0.53, 0.70) percentage and quantization [bulk, quantum well (QW)]. Due to lower effective transport mass and higher injection velocity, In0.7Ga0.3As QW FinFET provides better performance than In0.53Ga0.47As bulk FinFET. However, stronger quanti...

Response surface methodology was applied for optimization of the sour cherry Marasca juice spray drying process with 20, 30 and 40% of carriers maltodextrin with dextrose equivalent (DE) value of 4-7 and 13-17 and gum arabic, at three drying temperatures: 150, 175 and 200 °C. Increase in carrier mass per volume ratio resulted in lower moisture content and powder hygroscopicity, higher bulk dens...

We show that coherent optical phonons in GaAs multiple quantum wells are generated in a completely different way as compared to bulk GaAs. Unlike in bulk GaAs where the ultrafast screening of electric fields by photogenerated charge carriers is known to be dominant, three distinctive generation mechanisms contribute simultaneously in multiple quantum wells. The interplay between impulsive Raman...

poorly water-soluble drugs often suffer from limited or irreproducible clinical response due to their low solubility and dissolution rate. in this study, organic solvent-free solid dispersions (osf-sds) containing telmisartan (tel) were prepared using polyvinylpyrrolidone k30 (pvp k30) and polyethylene glycol 6000 (peg 6000) as hydrophilic polymers, sodium hydroxide (naoh) as an alkalizer, and ...

The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo's theorem, under injection of localized surface domains and of bulk charge carriers. The bi...

We have made use of a stepped doping profile to improve the performance of strained-Si ultra-short MOSFETs. Electron mobility curves are calculated by a Monte Carlo simulator including electron quantization and Coulomb scattering, in addition to phonon and surface roughness scattering. In the first part of the paper, the effect of Coulomb scattering due to both interface charges and bulk impuri...

Complementary angle-resolved photoemission and bulk-sensitive k-resolved resonant inelastic x-ray scattering of divalent hexaborides reveal a >1 eV X-point gap between the valence and conduction bands, in contradiction to the band overlap assumed in several models of their novel ferromagnetism. This semiconducting gap implies that carriers detected in transport measurements arise from defects, ...