The absorption of the H2S on the small boron nitride fullerene (B12N12) and its Al-inserted analog was theoretically analyzed by density functional theory. The structural stability was based on the minimum energy and non-complex vibrational frequencies. Different sites and orientations of H2S, using the monomer unit, were considered. Compared with the...

Two-dimensional boron-carbon-nitride materials exhibit a spectrum of electronic properties ranging from insulating to semimetallic, depending on their composition and geometry. Detailed experimental insights into the phase separation and ordering in such alloy are currently lacking. Here we report the mixing and demixing of boron-nitrogen and carbon phases on ruthenium (0001) and found that ene...

Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but...

This paper reports on characterization techniques for electron emission from potassiumintercalated boron nitride-modified graphitic petals (GPs). Carbon-based materials offer potentially good performance in electron emission applications owing to high thermal stability and a wide range of nanostructures that increase emission current via field enhancement. Furthermore, potassium adsorption and ...

Submitted for the MAR13 Meeting of The American Physical Society Topological phase transition in hexagonal boron-nitride bilayers modulated by gate voltage1 GUOJUN JIN, XUECHAO ZHAI, Nanjing University — We study the gate-voltage modulated electronic properties of hexagonal boron-nitride bilayers with two different stacking structures in the presence of intrinsic and Rashba spin-orbit interacti...

The aim of the present review is to highlight the state of the art in high-pressure design of new advanced materials based on boron nitride. Recent experimental achievements on the governing phase transformation, nanostructuring and chemical synthesis in the systems containing boron nitride at high pressures and high temperatures are presented. All these developments allowed discovering new mat...

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the us...

We have synthesized boron nitride nanotubes (BNNTs) in an arc in presence of boron and nitrogen species only, without transition metals. We find that BNNTs are often attached to pure boron nanoparticles, suggesting that root-growth is a likely mechanism for their formation. To gain further insight into this process we have studied key mechanisms for root growth of BNNTs on the surface of a liqu...

Boron nitride nanotubes have been proposed as a suitable reinforcement for metal matrix composites. In order to be effective, the interaction between the metal and the nanotube needs to be strong while retaining the nanotube structure. Computational quantum chemistry was used to study interactions of aluminium and titanium metal clusters with boron nitride nanotubes. The effect of varying the r...

A comprehensive study was performed on hydrogen adsorption and storage in Ca-coated boron fullerenes and nanotubes by means of density functional computations. Ca strongly binds to boron fullerene and nanotube surfaces due to charge transfer between Ca and the B substrate. Accordingly, Ca atoms do not cluster on the surface of the boron substrate, while transition metals (such as Ti and Sc) per...