This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The high performance technology platforms are presented, have special advantages for addressing applications submillimeter-wave and range. status of process is reviewed integration challenges examined. A detailed discussion on millimeter-wave...

In this work we present a CMOS high frequency direct immunosensor operating at 6 GHz (C-band) for label free determination of creatinine. The sensor is fabricated in standard 0.13 μm SiGe:C BiCMOS process. The report also demonstrates the ability to immobilize creatinine molecules on a Si3N4 passivation layer of the standard BiCMOS/CMOS process, therefore, evading any further need of cumbersome...

This paper presents a high-frequency frdly differential BiCMOS operational amplifier designed for use in switched-capacitor circuits. The OP amp is integrated in a 3. O-GHZ, 2~m BiCMOS process with an active die area of 1.0 mm x 1.2 mm. This BiCMOS op amp offers an infinite input resistance, a dc gain of 100 dB, a nnity-gain freqnency of 90 MHz with 45° phase margin, and a slew rate of 150 V/ p...

A current-mode squarer/divider circuit with a novel translinear cell is presented for automotive applications. The proposed circuit technique increases the accuracy of the squarer/divider function with better input dynamic range and temperature insensitivity. Simulation results show that the variation of the output current is within ±0.2% over the temperature range from −40◦C to 140◦C. key word...

A universal BiCMOS low-voltage-swing transceiver (driverlreceiver) with low on-chip power consumption is reported. Operating at 3.3V, it can drivekeceive low-voltageswing signals with termination voltages ranging from SV down to 2V without using any external reference voltages.

CMP aims at providing Universities, Research Laboratories and Industries with the possibility to have their integrated circuits projects fabricated for prototyping and low volume production. Presently, users are serviced for CMOS double layer poly/double layer metal (DLP/DLM) 0.8, DLM/TLM 0.6μ, DLP/4LM 0.35μ, SLP/6LM 0.25μ, SLP/6LM 0.18μ, BiCMOS DLP/DLM 0.8μ, SiGe HBT 0.8μ DLP/DLM, SiGe HBT 0.3...

Class AB differential amplifiers using composite BiCMOS and bipolar transistors are introduced. Their utilization for the implementation of low voltage (+-1.65V) operational amplifiers with high slew rate and rail to rail common mode input voltage range is discussed.

This paper presents a six-bit current-steering digital-to-analogue converter (DAC), which optimises the spurious free dynamic range (SFDR) performance of high-speed binary weighted architectures by lowering current switch distortion and reducing the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-ch...