A nano-multiplication-region avalanche photodiode (NAPD) featuring confinement of a multiplication region and a charging region in a nano-pillar was proposed for realization of novel near-constant-gain mode multiplication, low dark count rate, low afterpulsing and high avalanche initiation probability. Process and device simulations showed that near-constant-gain mode multiplication can be real...

A new silicon avalanche photodiode is Integrated with transimpedance amplifier and photon counting circuitry front-end in order to be applied in a miniaturized optical brain imaging system. This on-chip integrated system is fabricated using low-cost standard CMOS process and offers high sensitivity, high-speed, with low-power and low-noise

In our earlier work we introduce a numerical analysis to investigate the excess noise and performance factor of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process. In this paper we investigate the gain, breakdown voltage and carrier injection breakdown probability of homojunction avalanche photodiode in the wide rang...

We report the results of exposing a Hamamatsu avalanche photodiode (APD) to a 7.9 Tesla magnetic field. The effect of the magnetic field on the gain of the APD is shown and discussed. We find APD gain to be unaffected in the presence of such a magnetic field.

An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD), consisting of a GaAs 0.52 Sb 0.48 absorption region an Al 0.85 Ga 0.15 As 0.56 0.44 avalanche region, is reported. The device incorporated appropriate doping profile to suppress tunneling current from the achieving large gain, ?130 at room temperature. It exhibits excess factors 1.52 2.48 gain 10 20, r...