Gallium nitride (GaN) thin films on sapphire substrates were successfully separated and transferred onto Si substrates by pulsed UVlaser processing. A single 600 mJ/cm, 38 ns KrF excimer laser pulse was directed through the transparent substrate to induce a rapid thermal decomposition of the GaN at the GaN/sapphire interface. The decomposition yields metallic Ga and N2 gas that allows separatio...

The performance of devices fabricated from GaN and related compounds is strongly affected by the resistances caused by electrical contacts. To avoid excessive heating resulting in a failure of the device, speciŽc contact resistances less than ,10 Wcm for light-emitting diodes (LEDs) and less than ,10 Wcm for laser diodes are required. This applies in particular to ohmic contacts on p-doped GaN ...

We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer proce...

With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis...

Gallium nitride (GaN), in contrast to other commonly used piezoceramics, is a semiconductor that exhibits piezoresistive in addition to piezoelectric effects. The large piezoresponse – combined piezoelectric and piezoresistive effects – of GaN points out possible applications of GaN-based material systems in resonant devices. While the static piezoresistive response of GaN is small [1], the tim...

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN e...

This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in t...

This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tung...

BACKGROUND The purpose of this study was to evaluate the occurrence of hypoesthesia after superficial parotidectomy depending on preservation of posterior branch of the great auricular nerve (GAN). METHODS This prospective, controlled, double blind, multicenter trial included 130 patients. The posterior branch was preserved in 93 patients (GAN group), and ligated in 33 patients (non-GAN group...

Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area ...