Yellow luminescence (YL) analysis was investigated as a possible route for the screening of as-grown wafers for kink effect in Fe-doped AlGaN/GaN HEMTs, i.e., prior to their final fabrication. This is because the kink effect in the output characteristics of GaN HEMTs has previously been suggested to originate from YL-related defect states. In contrast to earlier works, no direct correlation bet...

In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (gm) with respect to the intrinsic DC gm. To reduce this gmcollapse and improve high frequency performance, we have developed a new technology based on a combination of vertical...

Delay analysis providing an alternative physical explanation on carrier transport, which may be more applicable to high electron mobility transistor (HEMT) channels with moderate carrier mobilities, has been applied to enhancement-mode (E-mode) and depletion-mode (D-mode) InAlN/AlN/GaN HEMTs with comparable fT at room and cryogenic temperatures. It was found that the speed of the E-mode HEMTs w...

Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded carbon-doped semi-insulating is proposed suppress buffer-induced effect. Two-dimensional transient simulation was carried out show successful suppression SCPG-HEMTs compared conventional...

InP high electron mobility transistors (InP HEMTs) with different spacer thickness 1 to 7 nm in the InAlAs-InGaAs heterostructure have been fabricated and characterized at 5 K respect electrical dc rf properties. The HEMT noise performance was extracted from gain measurements of a hybrid low-noise amplifier (LNA) equipped discrete transistors. When biased for optimal operation, LNA using HEMTs ...

In this article, an amorphous ternary AlBN dielectric passivation layer is proposed for GaN/AlGaN high-electron mobility transistors (HEMTs). The source–gate–drain access regions with both and AlN films deposited by pulsed laser deposition are investigated to understand their effects on the device performance. Compared AlN-passivated HEMTs, electrical characteristics of AlBN-passivated HEMTs si...

AlGaN/GaN high electron mobility transistors (HEMTs) were exposed to 3 MeV protons at fluences of 6 10, 4 10 and 1 10 protons/cm. The drain saturation currents decreased by 20% and the maximum transconductance decreased by 5% at the highest fluence. As the fluence increased, the threshold voltage shifted more positive values. After proton irradiation, the gate leakage current increased. The Sch...

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is de...

One-dimensional approach for simulation of multi-gate FETs and HEMTS is proposed and validated by comparison with full two-dimensional simulations.

The fundamental limits of the microwave noise performance high electron mobility transistors (HEMTs) are scientific and practical interest for applications in radio astronomy quantum computing. Self-heating at cryogenic temperatures has been reported to be a limiting mechanism noise, but cooling strategies mitigate it, instance using liquid cryogens, have not evaluated. Here, we report measurem...