We report on the spectroscopy and photodynamic characterization of Brønsted and Lewis acid sites within solids with respect to the behavior of Nile Red (NR) upon interaction with single- and multi-metal(X)-doped MCM41 materials (X = Ti and/or Al) in dichloromethane (DCM) suspensions. The steady-state results show that the H-bonding ability of doped MCM41-based materials leads to different NR po...

This study addresses the optical and electrical properties of ZnO thin films doped with Al, V and Nb (ZnO:Al, ZnO:V and ZnO:Nb, respectively) deposited by r.f. magnetron sputtering in Ar atmosphere. The films are deposited on glass substrates without heating and heated at 100C, 150C and 275C. The optical spectra of transmittance and reflectance are measured and the optical band gap of the films...

The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of...

ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO: (Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermor...

The key properties of a successful cathode material, such as the structural stability during delithiation, the battery voltage, and the Li mobility, were investigated for Al-doped Li–Mn–Ni oxide structures, using density-functional theory and the nudged-elastic band method. The rhombohedral layered structure of LiMn0.5Ni0.5O2 with zigzag and flower arrangements of transition metal atoms as well...

Impure ZnO materials are of great interest in optic and electronic applications. In this work, the effects of Al-doping on the electronic structures of ZnO system are investigated in detail. We find that the crystal structure strains significantly due to the introduction of Al impurity. On the other hand, the electronic band structures show that the position of the Fermi level moves upwards and...

Glassy ferromagnetism is observed in diluted magnetic semiconductor Al-doped 4H-SiC. We propose a possible explanation for the origin of ferromagnetism order that is the coeffect of sp(2)/sp(3) configuration along with the structural defects. This result unambiguously demonstrates the existence of intrinsic ferromagnetism order in nonmagnetic sp systems.

In this paper, Al-doped ZnO thin film transistors (AZO-TFT) were fabricated by the thermal evaporation growth of AZO channel layer on a silicon substrate at temperatures below 250°C. A SiO2 dielectric layer grown by the horizontal furnace was used as a gate. An active layer thickness of 10nm was measured by Atomic Force Microscopy (AFM), and its surface had root mean square (rms) roughness 12.6...

Despite density functional theory (DFT) being the most widely used ab initio approach for studying the properties of oxide materials, the modeling of localized hole states in doped or defective oxides can be a challenge. The electronic hole formed when silica is doped with aluminum is such a defect, for which a DFT description of the atomic and electronic structures has previously been found to...

Different concentrations of Li/Al-doped YPO4:Eu0.05 phosphors have been prepared by the solid state reaction method and are characterized by X-ray diffraction, scanning electron microscopy, excitation and emission measurements. The dependence of various optical and morphological properties of the prepared materials on Li/Al concentration has been discussed in our present work. Incorporation of ...