microfabrication applications, it is widely used to transfer the designed patterns from an etching mask to the substrate. When the sample is immersed into the etching bath, the etchant only contacts and reacts with the substrate surfaces where are uncovered by the etching mask. The suitable materials for the mask can be polymers or other materials such as photoresist, SU-8,SiO2 andSi3N4, which ...

This study evaluated the effect of organic solvent (acetone or ethanol) on the microtensile bond strengths (MTBS) of an adhesive system applied to dry and moist dentin. Sixteen extracted human third molars were ground to expose a flat occlusal dentin surface and acid etched for 20 seconds (20% phosphoric acid gel, Gluma Etch 20 Gel, Heraeus/Kulzer). After rinsing the acid etchant, an ethanol-ba...

Titanium Nitride (TiN) is a wear resistant and complementary metal oxide silicon (CMOS) compatible material that is increasingly being investigated for MEMS applications. Incorporating any new material into a MEMS device requires the development of a processing strategy. This paper discusses a wet-etching strategy for patterning and releasing TiN features on Cr sacrificial layers. Filtered arc ...

The purpose of this study was to evaluate ascorbic acid (AS) and ferric chloride (FE) for bonding 4-META/MMA-TBB resin to dentin that had been treated with NaClO. An experimental dentin conditioner consisting of 10%AS and 5%Fe (10AS-5FE) and three controls (10AS-0FE, 0AS-5FE, and 0AS-0FE) were prepared. Ascorcic acid neutralizes NaClO. The flattened dentin surfaces were modified sequentially wi...

AIM The purpose of this review is to represent acids that can be used as surface etchant before adhesive luting of ceramic restorations, placement of orthodontic brackets or repair of chipped porcelain restorations. Chemical reactions, application protocol, and etching effect are presented as well. STUDY SELECTION Available scientific articles published in PubMed and Scopus literature databas...

A useful solution (10 mgr of Fe CI3 in 25 cc. of isopropanol plus two drops of water) for observing dislocations in KCl by the etching method has recently been reported by Subramanian [1]. The ability of solutions of this kind to selectively etch is attributed to an inhibitor effect [2, 3, 4], but little is known about the nature of the inhibitor agent. It should be kept in mind that transition...

The effect of the oxidizer present in etching solution on surface morphology and microstructure obtained after porosifying a p-type silicon wafer using metal-assisted chemical was studied. morphologies Si wafers porosified two different solutions, HF/H 2 O HF/KMnO 4 , were compared to establish how either oxidizers (H or KMnO ) should be chosen depending desired application. A comparative study...