The catalytic subunit of the telomerase complex, hTERT, ensures unlimited proliferative potential of cancer cells by maintaining telomere function and protecting from apoptosis. Using a miRNA screening approach we identified miR-296-5p and miR-512-5p as miRNAs that target hTERT in breast cancer cells. Ectopic miR-296-5p and miR-512-5p reduce telomerase activity, drive telomere shortening and ca...

Recently, Indesteege et al. [1] had described attacks against 23 and 24-step SHA-512 at SAC ’08. Their attacks are based on the differential path by Nikolić and Biryukov [2]. The reported complexities are 2 and 2 calls to the respective step reduced SHA-512 hash function. They provided colliding message pairs for 23-step SHA-512 but did not provide a colliding message pair for 24-step SHA-512. ...

Fluorescence imaging is a widely adopted technique in various scientific disciplines for mapping chemical and biological characteristics or molecular interactions in cells by generating high contrast images in a non-invasive way. Recently, fluorescence lifetime imaging microscopy (FLIM) has become a practical alternative to fluorescence intensity thanks to affordable pulsed laser sources and co...

Dear Editor, Guseva Canu et al 1 examined exposure–response in 833 workers from one of two French plants included a European cohort over 14?000 male TiO2 workers.2 Dose–response was reported solely for the pooled by Boffetta ,2 but investigated this small group (see table 1).3 View table: Table Relative risk (RR) (95% CI) mortality lung cancer estimated cumulative exposure to respirable dus...

The difficulty of integer factorization is fundamental to modern cryptographic security using RSA encryption and signatures. Although a 512-bit RSA modulus was first factored in 1999, 512-bit RSA remains surprisingly common in practice across many cryptographic protocols. Popular understanding of the difficulty of 512-bit factorization does not seem to have kept pace with developments in comput...

— Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold and tunneling gate leakage currents has become one of the most important criteria in the design of VLSI circuits. This paper presents a method based on dual-V t and dual-T ox assignment to reduce the total leakage power...