The notion of a belligerent GE-filter in GE-algebra is introduced, and the relationships between will be given. Conditions for to are provided. product union GE-algebras discussed its properties investigated.

Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more...

A detailed Raman characterization of the structural properties of as-grown and annealed self-assembled Si/Ge dot multilayers is reported in this paper. Several new modes in as-grown or annealed Si/Ge dots and a frequency splitting of 4.2 cm between the longitudinal ~LO! and transversal optical ~TO! Ge-Ge modes in as-grown Si/Ge dots are observed in Raman spectra. An average Ge content of 0.8 an...

To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire tr...

Varicella-zoster virus (VZV) glycoprotein E (gE) is required for VZV infection. Although gE is well conserved among alphaherpesviruses, the amino terminus of VZV gE is unique. Previously, we showed that gE interacts with insulin-degrading enzyme (IDE) and facilitates VZV infection and cell-to-cell spread of the virus. Here we define the region of VZV gE required to bind IDE. Deletion of amino a...

One of the solutions for density measurement is to make use gamma-ray transmission technique. We studied by this technique, using Co-60 and Cs-137. Each source, without materials in geometry, was counted noted intensities as (I0). All were (I). [I/I0] rates calculated. Now, could be determined via Beer-Lambert Equation. Experimental application performed on industrial metals or metal alloys lik...

As a promising electronic material, Ge nanowire (GeNW) has attracted much attention for its low band gaps, high mobilities, and unprecedented dimensions. This article reviews recent research and advancement on this topic and summarizes many aspects of GeNWs, including preparation, surface chemistry, physical properties, functional devices, and controlled assembly. It is shown that GeNWs can be ...