The effect of impregnation sequence on the formation of Pt/Ni bimetallic nanoparticles supported on g-Al2O3 was investigated for catalysts with Pt/Ni atomic ratios of 3/1 and 1/1. These bimetallic catalysts were prepared with a fixed Pt loading (5 wt.%) by incipient impregnation of one metal precursor and calcination, followed by the impregnation of the second metal precursor and a second calci...

Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this stud...

The chemical degradation of exfoliated black phosphorus (BP) when exposed to ambient conditions can be effectively suppressed via the deposition of Al2O3 dielectric on the BP surface. A good understanding of the interactions between the BP layer and Al2O3 dielectric is important for practical device applications. In the presented paper, first principles calculations have been performed to study...

The Cu/Al2O3 catalyzed ozonation for degrading an endocrine disruptor—alachlor in water was investigated. The Cu/Al2O3 powders were coated on a cordierite honeycomb column, which was taken as the reactor of catalytic ozonation of alachlor. Additional uncatalyzed experiments were carried out and the results were compared to those of the catalytic runs. The experimental results demonstrated that ...

Organolead trihalide perovskite solar cells based upon the co-deposition of a combined Al2O3-perovskite layer at T < 110 °C are presented. We report an average PCE = 7.2% on a non-sintered Al2O3 scaffold in devices that have been manufactured from a perovskite precursor containing 5 wt% Al2O3 nanoparticles.

Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.e., stronger Cu ...

This paper demonstrates that seeding nanocrystalline transition alumina powders is a viable option for producing high quality, alumina-based ceramics. By using a-Al2O3 concentrations of 51.25 wt.% a-Al2O3 seed particles (equivalent to 5 10 seeds/cm of g-Al2O3) the sintering temperature is reduced from 1600 C for unseeded g-Al2O3 to 1300–1400 C in dry pressed powders. The scale of the sinteredmi...

Al2O3 and Y2O3 are both very promising host materials for active integrated optics applications such as rare-earth ion doped waveguide lasers. In this paper, a reactive co-sputtering process for stable, target condition-independent deposition of Al2O3 layers with high optical quality is discussed. The loss of as-deposited Al2O3 waveguides in the near infrared wavelength range was 0.3 dB/cm. Rea...

A simple and efficient Pd/Al2O3-NR-RD catalyst was prepared by depositing palladium on a shape controllable Al2O3-NR support through a two-step process that involves hydrothermal synthesis of Al2O3-NRs followed by reductive-deposition of palladium. This catalyst showed high activity in the catalytic formylation of amines by CO2-H2 under mild conditions with up to 96% yield.