this paper proposes a low voltage (±0.55v supply voltage) low power (44.65µw) high common mode rejection ratio (cmrr) differential amplifier (d.a.) with rail to rail input common mode range (icmr), constant transconductance (gm) and enhanced frequency performance. its high performance is obtained using a simple negative averaging method so that it cancels out the common mode input signals at th...

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

a high accurate and low-voltage analog cmos current divider which operates with a single power supply voltage is designed in 0.18µm cmos standard technology. the proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. the proposed divider is modeled with neural network while tlbo algorithm is used to optimize it. the proposed optimization...

In this work, a non-isolated high step up DC-DC converter using coupled inductor and voltage multiplier cell is proposed. The proposed converter conversion ratio is efficiently extended by using a coupled inductor. An interleaved configuration of two diode-capacitor cells is applied to step up the voltage conversion ratio and decrease the voltage stress across the switches. Also, in the suggest...

Abstract This study presents the results of a new resin survey for potting high voltage electronics. The main objective consists in improving European manufacturing capability (>6 kV) and temperature applications (maximum temperature: 180°C). targeted improvements include enhanced thermal stability insulation properties adhesive target lifetime 15 years. In addition, specific attention has b...