Perturbed angular correlation of gamma rays (PAC) was applied to measure concentrations of point defects in quenched and milled intermetallic compounds. Two systems with high ordering energies were studied, PdIn and NiAl, with principal results obtained for PdIn. The defects, lattice vacancies and antisite atoms, were detected by quadrupole interactions induced at nuclei of nearby In/Cd probe a...

We have studied by Spot Profile Analysis Low Energy Electron Diffraction (SPALEED) and Auger Electron Spectroscopy (AES) Ni-Al alloyed layers formed by annealing, around 780 K, Al deposits on a stepped Ni(111) surface. The surface structure and composition of the thin epitaxial Ni3Al and NiAl films, obtained respectively below and above a critical Al initial coverage c θ , differ markedly from ...

The investigation on the structures, stabilities, and magnetism of Ni(m) Al(n) (m = 1-3, n = 1-9) clusters has been made by using first principles. We found some new ground-state structures which had not been found before. These mixed species prefer to adopt three-dimensional (3D) structures starting from four atoms. All the ground-state structures for the Ni-Al clusters are different from thos...

The dependence of the Co anisotropy constants on the measurement temperature, deposition conditions, and underlayer materials was studied using unicrystal Co~101̄0!/Cr ~or NiAl!~112!/ Ag~110! films sputter deposited on hydrofluoric acid etched Si~110! substrates. The single, in-plane easy axis orientation in these films allows the direct determination of the anisotropy constants. The anisotropy ...

CoCrPt films for longitudinal recording media were investigated as a function of substrate bias applied during the deposition. CoCrPt films were deposited on an underlayer stack consisting of glass/NiAl/CrMn with bias applied only during deposition of the CoCrPt layer. A strong dependence of the CoCrPt coercivity on the substrate bias was observed when a thin hexagonal-close-packed CoCrTa templ...

Long term tensile creep studies were conducted on binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed depending on stress and temperature. It is concluded that the primary creep of NiAl is limited by dislocation mobility. The stress exponent for creep, n, decreased fro...