The authors compare the effects of plasma charging and vacuum ultraviolet (VUV) irradiation on oxidized patterned Si structures with and without atomic-layer-deposited HfO2. It was found that, unlike planar oxidized Si wafers, oxidized patterned Si wafers charge up significantly after exposure in an electron-cyclotron resonance plasma. The charging is dependent on the aspect ratio of the patter...

The effects of aluminum implantation on HfO2 thin films using plasma immersion ion implantation (Al– PIII samples) are investigated. X-ray photoelectron spectroscopy measurements reveal that most of the implanted aluminum atoms accumulated near the surface region of the oxide film. The greatly reduced leakage current, smaller flatband shift and steep transition from the accumulation to the depl...

In this paper the influence of material composition on the structural, surface and optical properties of HfO2-TiO2 mixed oxide coatings was investigated and discussed. Five sets of thin films were deposited using reactive magnetron sputtering: HfO2, TiO2 and three sets of mixed HfO2-TiO2 coatings with various titanium content. The change in the material composition had a significant influence o...

Recently, we reported linear electro-optic (EO) effects in (100)-epitaxial yttrium-doped hafnium dioxide (Y-HfO2) ferroelectric thin films. In this study, have investigated the influence of orientation on EO effect Y-HfO2 thin-film. (111)-epitaxial undoped HfO2 and films were deposited Sn-doped In2O3/yttria-stabilized zirconia (111) substrates at room temperature through radiofrequency magnetro...

In this paper, we propose a novel design analysis for a Junctionless Double Gate Vertical MOSFET (JLVMOS) with metal gate electrode and HfO2, for which the simulations have been performed using TCAD (ATLAS), The simulated results exhibits significant improvements in comparison to conventional JLVMOS device with a polysilicon gate electrode and ITRS values for different node technology . In plac...

In the paper, random telegraph noise (RTN) in high-κ/metal-gate MOSFETs is investigated. The RTN in high-κ MOSFETs is found different compared to that in SiON MOSFETs, and faces challenges in characterization. Therefore, the characterization method is improved based on clustering and Hidden Markov Model, which greatly enhances the ability to extract RTN with non-negligible “ghost noise” in high...

In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the lowtemperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate t...

We report here on pentacene based organic field effect transistors (OFETs) with a high-k HfO2 gate oxide. HfO2 layers were prepared by two different methods: anodic oxidation and sol–gel. A comparison of the two processes on the electrical properties of OFETs is given. Ultra thin nanoporous (20 nm) sol–gel deposited oxide films were obtained following an annealing at 450 C. They lead to high mo...

An all-optical terahertz absorption technique for nondestructive characterization of nanometer-scale metal oxide thin films grown on silicon substrates is described. Example measurements of laser-deposited TiO2 and atomic layer-deposited films of HfO2 are presented to demonstrate applicability to pure Y2O3, Al2O3, and VOx and mixed combinatorial films as a function of deposition conditions and ...

In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2-x /Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample with single HfO2-x structure shows bidirectional memory switching properties with symmetrical I-V cur...