A new analytic theory is developed for asymptotic stage of self-catalyzed growth III-V nanowires (NWs) by molecular beam epitaxy (MBE), where NWs collect all group III atoms deposited from vapor. The shadowing NW length derived which corresponds the full substrate surface in MBE. and radius are depending on effective deposition thickness MBE parameters. It shown that increases, their decreases ...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

Model-based engineering (MBE) is a software development approach in which abstraction via modeling is used as the primary mechanism for managing the complexity of software-based systems. An effective approach to software development must be supported by effective technologies (i.e., languages, methods, processes, tools). The wide range of development tasks that effective MBE approaches must sup...

Recent advances in thin-film crystal-g:rowth techniques such as molecular-beam epitaxy (MBE) have enabled the fabrication of quantum-well devices, which consist of alternating layers of various crystalline solid materials so thin that the materials' combined quantum-mechanical properties override their individual bulk properties. By using MBE, we constructed a number of quantum-well devices tha...

We present a parallel algorithm for Monte Carlo simulation of molecular beam epitazial growth (MBE) focusing on the software we have developed and the ezperiences gained. An eficient sequential method to do MBE simulation was developed that uses a single binary tree t o store the rates of occwence of all possible events at a given time. The challenge was to find a ioay to adapt this method to a...

In this article kinetic Monte Carlo simulations for molecular beam epitaxy (MBE) and pulsed laser depositon (PLD) are compared. It will be shown that an optimal pattern conservation during MBE is achieved for a specific ratio of diffusion to deposition rate. Further on pulsed laser deposition is presented as an alternative way to control layer by layer growth. First results concerning the islan...

Eu:CaF2 layers have been grown epitaxially on Si using molecular beam epitaxy ~MBE! with the intent of realizing an electrically pumped optical source on Si. Here we present an atomic force microscopy study of the morphological features of MBE-grown Eu:CaF2 on p-type Si~100! substrates and a study of electroluminescence ~EL! from EL devices fabricated from these layers. The surface morphologies...

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown ...

Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alig...