Abstract: A novel reconfigurable patch antenna for frequency diversity is proposed by reconfiguring its geometry using tree rectangular tapes that are connected to the patch via six RF MEMS switches. So switching between the different frequency bands is achieved by using capacitive series RF-MEMS switches. The antenna was designed to operate at 2.6 GHz, 3.1 GHz, 3.5 GHz and 5 GHz.

This paper deals with a relatively new area of radio-frequency (RF) technology based on microelectromechanical systems (MEMS). RF MEMS provides a class of new devices and components which display superior high-frequency performance relative to conventional (usually semiconductor) devices, and which enable new system capabilities. In addition, MEMS devices are designed and fabricated by techniqu...

The RF MEMS technology has a great potential to replace conventional switching techniques and it can offer highly miniature switches and sensors with superior RF performance. The main principle of a RF MEMS based power senor is based on sensing the attractive electrostatic force between the signal line and a free standing electrode that is suspended at a small distance from the signal line. Key...

Various RF circuit blocks implemented by using commercially available MEMS digital capacitor arrays are presented for reconfigurable RF systems. The designed circuit blocks are impedance-matching network, tunable bandpass filter, and VSWR sensor. The frequency range of the designed circuits is 0.4-4GHz. The MEMS digital capacitor arrays that are employed in the designs have built-in dc-to-dc vo...

An overview of the MEMS technology development and applications is given in this paper. A special attention is paid to the RF MEMS switches. Both series and shunt MEMS switches have been considered. It is also presented a technique for modeling and design of inductively-tuned MEMS shunt switch. Some very important issues for the device maturity e.g. reliability and packaging have been addressed.

A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or polycrystalline silicon as sacrificial layers, providing multi-air-gaps. Various types of substrates like bulk silicon and SOI can be used. F...