We have synthesized single crystalline ZnO nanowires by thermal evaporation method and fabricated individual ZnO nanowire field effect transistors (FETs) to investigate their electrical properties. ZnO nanowires are strongly affected by O2 molecules in ambient. For example, surface defects such as oxygen vacancies act as adsorption sites of O2 molecules, and the chemisorption of O2 molecules de...

Optical phonon confinement and efficient UV emission of ZnO nanowires were investigated in use of resonant Raman scattering (RRS) and photoluminescence (PL). The high-quality ZnO nanowires with diameters of 80-100 nm and lengths of several micrometers were epitaxially grown through a simple low-pressure vapor-phase deposition method at temperature 550 degrees C on the precoated GaN(0001) buffer...

Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO...

An electrically pumped Sb-doped ZnO nanowire/Ga-doped ZnO p-n homojunction random laser is demonstrated. Catalyst-free Sb-doped ZnO nanowires were grown on a Ga-doped ZnO thin film on a Si substrate by chemical vapor deposition. The morphology of the as-grown titled nanowires was observed by scanning electron microscopy. X-ray photoelectron spectroscopy results indicated the incorporation of Sb...

ZnO nanowires were grown in gram quantities on graphite flakes (as collector) using the vapour transport and condensation approach. The yield, defined as the weight ratio of ZnO nanowires to the original graphite flakes, has been studied thoroughly by tuning the various growth parameters such as pressure and temperature inside the tube furnace, the amount of graphite powder in the original sour...

The synthesis of ultra-long high-quality ZnO nanowires with uniform size and orientation on heterogeneous substrates is highly desirable, not only for investigating the fundamental properties of ZnO nanowires, but also for fabricating integrated functional nanodevices. Here we present a novel and general technique for growing vertically aligned ultra-long ZnO nanowires on various substrates. Mo...

We report electrical and optoelectrical properties of a cross-junction of two semiconducting nanowires. Semiconducting nanowires and their junction play an important role in nanonetwork device. By mechanically manipulating the nanowires, cross-junction nanodevices are fabricated on SiO2/Si substrate using VO2 and ZnO nanowires. These junctions are formed across prepatterned two-probe Au electro...

Large-scale vertically aligned ZnO nanowires with high crystal qualities were fabricated on thin graphene oxide films via a low temperature hydrothermal method. Room temperature photoluminescence results show that the ultraviolet emission of nanowires grown on graphene oxide films was greatly enhanced and the defect-related visible emission was suppressed, which can be attributed to the improve...

The fabrication and properties of n-ZnO nanowires/p-CuO coaxial heterojunction (CH) with a photoresist (PR) blocking layer are reported. In our study, c-plane wurtzite ZnO nanowires were grown by aqueous chemical method, and monoclinic CuO (111) was then coated on the ZnO nanowires by electrochemical deposition to form CH. To improve the device performance, a PR layer was inserted between the Z...

ZnO nanowires have been synthesized on porous silicon substrates with different porosities via the vapour-liquid-solid method. The texture coefficient analysed from the XRD spectra indicates that the nanowires are more highly orientated on the appropriate porosity of porous silicon substrate than on the smooth surface of silicon. The Raman spectrum reveals the high quality of the ZnO nanowires....