The effect of Zn-doping on the phase composition and optical properties Bi2ZnxFe1-xTa2O9.5-Δ (x = 0.3, 0.5, 0.7) was studied. XRD data showed that samples crystallize in structural type pyrochlore (sp. gr.Fd-3m). For all samples, an admixture bismuth orthotantalate β-BiTaO4 triclinic modification up to 22.5 wt.% is observed. content increases with zinc doping. unit cell parameter rises from 10....

Measurements of the resistivity, magnetoresistance, and penetration depth were made on films of La1.85Sr0.15CuO4, with up to 12 at. % of Zn substituted for the Cu. The results show that the quadratic temperature dependence of the inverse square of the penetration depth, indicative of d-wave superconductivity, is not affected by doping. The suppression of superconductivity leads to a metallic no...

The magnetic polarization induced by nonmagnetic impurities such as Zn in high Tc cuprate compounds is studied by the variational Monte Carlo simulation. The variational wave function is constructed from the eigenstates obtained from Bogoliubov de Gennes mean field Hamiltonian for the twodimensional t − J model. A Jastrow factor is introduced to account for the induced magnetic moment and the r...

We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include high solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by ...

The chemical states of the ZnGeP(2):Mn interface which shows ferromagnetism above room temperature have been studied by photoemission spectroscopy. Mn deposition on the ZnGeP2 substrate heated to 400 degrees C induced Mn substitution for Zn and then the formation of metallic Mn-Ge-P compounds. Depth profile studies have shown that Mn 3d electrons changed their character from itinerant to locali...

Gallium phosphide (GaP) nanowire photocathodes synthesized using a surfactant-free solution-liquid-solid (SLS) method were investigated for their photoelectrochemical evolution of hydrogen. Zinc as a p-type dopant was introduced into the nanowires during synthesis to optimize the photocathode's response. Investigation of the electrical properties of Zn-doped GaP nanowires confirmed their p-type...

Superparamagnetic iron oxide nanoparticles (SPIONs) with high saturation magnetization are successfully synthesized via thermal decomposition method by doping Mn and Zn elements simultaneously. The synthesis procedure was modified according to the thermal stabilities of the precursors, in order to ensure that the stoichiometry of the synthesized samples can be retained exactly from the starting...

ZnO is a high melting point high charge carrier mobility semiconductor with potential as a thermoelectric material, but its high thermal conductivity is the limiting factor for increasing the thermoelectric figure of merit ZT. Here, we demonstrate that doping ZnO with heavy elements can significantly enhance ZT. Indium doping leads to ultralow κ~3 Wm-1K-1 and a high power factor α2σ~1.230×10-3 ...

The electronic properties of Te doped-ZnSb systems are investigated by first-principles calculations. We focus on the Zn(64)Sb(64-) (x)Te(x) systems (x = 0, 2, 3, 4), which respond to the 0, 1.56at%, 2.34at% and 3.12at% of Te doping concentration. We confirm that the amount of Te doping will change the conductivity type of ZnSb. In the cases of x = 2 and 3, we find that the Te element in ZnSb i...

X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of V atoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO2) formation at 15% V doping. O K edge spectra show V 3d–O 2p...