نتایج جستجو برای: zirconium zr

تعداد نتایج: 15415  

2009
Takeshi Otsuka Yoshiki Chujo

Highly transparent and homogeneous hybrids containing a single nano-sized inorganic oxide domain were synthesized from poly(methyl methacrylate) (PMMA) and aqueous dispersed zirconium oxide nanocrystals (ZrO2-NCs) in the presence of a coupling agent, 3-(methacryloxy)propyl-trimethoxysilane (MPTS), which was grafted onto the surface of ZrO2-NCs by zirconium hydroxide (Zr-OH) surface groups. The ...

2010
Eunji Hong David C. Dunand Heeman Choe

Commercially-pure zirconium is alloyed and dealloyed repeatedly with hydrogen at 810 C, thereby cyclically triggering phase transformations between hydrogen-free a-Zr and hydrogen-alloyed b-Zr. Under an externally applied tensile stress, the internal mismatch stresses produced by the a-b transformations are biased, resulting in the accumulation of strain increments after each chemical cycle in ...

2011
Ulku Dilek Uysal Tufan Güray

In this study, 2, 2', 3, 4-tetrahydroxy-3'-sulpho-5'-carboxyazobenzene (tetrahydroxyazon SC) has been synthesized for the first time and used for direct spectrophotometric determination of zirconium(IV). Tetrahydroxyazon SC in a 5.0 M acidic medium (up to pH 6) with zirconium(IV) gave a red complex (Zr-tetrahydroxyazon SC), which has maximum absorption at 495 nm (molar absorptivity, 4.9x104 l m...

2008
Andrew L. Hector William Levason Gillian Reid Stuart D. Reid Michael Webster

The structure of the title compound, [Zr(C(5)H(5))(2)(C(9)H(11)Te)(2)], consists of a zirconium(IV) centre bonded to two η(5)-coord-inated cyclo-penta-dienyl groups and two mesityltellurolate ligands; the discrete mol-ecule has crystallographic twofold rotation symmetry. The structural parameters compared with those in [(η(5)-Me(5)Cp)(2)Zr(TePh)(2)] [Howard, Trnka & Parkin (1995 ▶). Inorg. Chem...

2011

Ternary amorphous W–xCr–yZr alloys containing 9−38 at % tungsten, 15−42 at % chromium and 39−73 at % zirconium were successfully prepared by direct current (DC) magnetron sputtering technique. The corrosion rates of all the examined sputter−deposited W–xCr–yZr alloys were in the range of 1 × 10−3 mm/y or lower which are nearly one order of magnitude lower than those of the sputter−deposited tun...

2014
A. E. Mahmoud M. G. Mahfouz

The influence of zirconium on the grain refinement of Al 6063 alloy has been experimentally investigated. The microstructure and macrostructure of the refined alloy were investigated. The experimental results reveal that, the coarse dendrites in the microstructure of the alloy are effectively refined with the addition of zirconium to the melt prior to solidification. Grains of Al 6063 alloy can...

Journal: :Physical chemistry chemical physics : PCCP 2014
Mostafa Youssef Bilge Yildiz

In the energy-structure paradigm, we analyzed the defects that can arise in tetragonal zirconium oxide (T-ZrO2) involving the hydrogen atom or the hydrogen molecule using density functional theory. Our results indicate that the dominant hydrogen defect under reducing conditions is H(·)(0), a complex formed between the hydride ion and a doubly charged oxygen vacancy. This result is consistent wi...

Journal: :Dalton transactions 2013
Lan-Chang Liang Sheng-Ta Lin Chia-Cheng Chien Ming-Tsz Chen

The coordination chemistry of zirconium and hafnium complexes containing the tridentate amine biphenolate ligands [RN(CH2-2-O-3,5-C6H2(tBu)2)2](2-) ([R-ONO](2-); R = tBu (1a), iPr (1b), nPr (1c)) featuring distinct N-alkyl substituents is described. Alcoholysis of Zr(OiPr)4(HOiPr) or Hf(OiPr)4(HOiPr) with H2[1a] in diethyl ether solutions at -35 °C generates the corresponding five-coordinate [1...

Journal: :Journal of Phase Equilibria and Diffusion 2007

2016
Peng Xiao Ting Dong Linfeng Lan Zhenguo Lin Wei Song Dongxiang Luo Miao Xu Junbiao Peng

Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detaile...

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