The paper will introduce a simple new method on the synthesis of both hafnium and zirconium nitrate precursors. The intermediate product, dinitrogen pentoxide produced from the water extraction from fume nitric acid via phosphorus pentoxide, was condensed by liquid nitrogen trap into a flask equipped with hafnium or zirconium tetrachloride. To give the high yield, the mixture of fume nitric aci...

The electronic spectrum of a cold molecular beam of zirconium dioxide, ZrO(2), has been investigated using laser induced fluorescence (LIF) in the region from 17,000 cm(-1) to 18,800 cm(-1) and by mass-resolved resonance enhanced multi-photon ionization (REMPI) spectroscopy from 17,000 cm(-1)-21,000 cm(-1). The LIF and REMPI spectra are assigned to progressions in the Ã(1)B(2)(ν(1), ν(2), ν(3))...

The dispersion of small amounts of Ce(4+) ions in the bulk of ZrO2 leads to a photoactive material sensitive to visible light. This is shown by monitoring with EPR the formation and the reactivity of photogenerated (λ > 420 nm) charge carriers. The effect, as confirmed by DFT calculations, is due to the presence in the solid of empty 4f Ce states at the mid gap, which act as intermediate levels...

Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal–oxide–semiconductor processes, the relatively low crystallization temperature when zirconium-doped, and thickness scaling are among advantageous properties of hafnium oxide. Different requirements must fulfilled different applications Herein, high-temperatur...

Hafnium oxide mixed tantalum oxide (HTO) and Zirconium oxide mixed tantalum oxide (ZTO) layers were deposited on chemically cleaned p-Si substrate using RF magnetron sputtering technique. The oxide/Si stacks were annealed in oxygen for 30 minutes at 400 °C as on initial investigation. Both composition and structural properties were absolutely interesting to move further for electrical measureme...

..........................................................................................................I Acknowledgements......................................................................................................II Table of