The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy , the Al 3p , Al 3s and N 2p spectral densities are obtained. The corresponding local and partial theoretical densities of states (DOS) , as well as the total DOS and the band structure , are calculated by using the full potential linearized augmen...

The emergence of the field of spintronics has brought half-metallic ferromagnets to the centre of scientific research. A lot of interest was focused on newly created transition-metal pnictides (such as CrAs) and chalcogenides (such as CrTe) in the metastable zinc-blende lattice structure. These compounds were found to have the advantage of high Curie temperatures in addition to their structural...

The transition from shallow to deep centers as a function of pressure or alloying is investigated for oxygen and silicon donors in GaN and AlN, based on first-principles total-energy calculations. The stability of the localized deep state (DX center! is found to depend on interactions between the impurity and third-nearestneighbor atoms, which occur in different positions in the zinc-blende and...

The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having 001 orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relation...

We present results of an ab initio study of the nitrogen antisite defect in GaN and AlN. We show that the neutral antisite in zinc-blende structure exhibits metastable behaviour similar to the arsenic antisite in GaAs, but in the wurtzite structure the phenomenon does not exist. A new discovery is that the negative charge states of the nitrogen antisite are stabilized by the large band gap. In ...

Hexagonal wurtzite ZnS nanowires radially arrayed on cubic zinc-blende ZnS hollow spheres have been successfully achieved for the first time, and such novel heterogeneous ZnS hollow urchin-like hierarchical nanostructures show greatly enhanced photocatalytic properties due to their two-phase enhanced light-harvesting and high surface-to-volume ratio.

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results, and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as a function of the carrier and lattice temperatures and, in the case of semiconductor alloys, the material composition. keywords: energy relaxation tim...