During the past years, the investigations for Diluted Magnetic Semiconductor (DMS) nanomaterials have attracted considerable attention due to their novel properties and broad application prospects in diverse areas, such as logic devices, spin polarized light emitting diode, spin field-effect transistors, field-emission devices, optical isolator, non-volatile memory devices and quantum computer,...

We demonstrate computationally that two-dimensional polyphenylene is a typical semiconductor with a wide band gap, and the porous structure endows polyphenylene remarkably high selectivity for H(2) permeability relative to CO(2), CO and CH(4). This experimentally available porous graphene is expected to find applications in a hydrogen energy society.

The Mg(BiO2)2 is the orthorhombic crystal system acting as semiconductor in electric devices. To evaluate electronic band structures, the total density of state (TDOS) and the partial density of state (PDOS), Generalized Gradient Approximation (GGA) based on the Perdew–Burke–Ernzerhof (PBE0) was used for Mg(BiO2)2. The band gap was recorded at 0.959 eV, which is supported by a good semiconducto...

We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct g...

We propose a new device structure for obtaining visible light emission from wide band gap semiconductors. This heterojunction structure avoids ohmic contacting problems by using only the doping types which tend to occur naturally in II-VI semiconductors, while using a novel injection scheme to obtain efficient minority carrier injection into the wider band gap semiconductor. To verify this prop...

Interband mixing between two-dimensional states localized in a surface quantum well and heavy hole states of the valence band in narrow gap semiconductor Abstract Theoretical calculations in the framework of Kane model have been carried out in order to elucidate the role of interband mixing in forming the energy spectrum of two-dimensional carriers, localized in a surface quantum well in narrow...

Novel method doped carbon with nanoparticle Cr2O3 and thin film has been studied in much thought in wavelength range, the doping can help new excellent physical and chemical properties for carbon, this application has a semiconductor feature. Nanocomposite thin film deposited on copper and glass substrates have been created by utilizing Spray Pyrolysis method. The prec...

Based on a thermodynamic model for size-dependent melting temperature, the size-dependent band-gap of low dimensional semiconductor compounds is modeled without any adjustable parameter. The model predicts an increase of the band-gap of nanoparticles and nanowires for IIBVIB and IIIB-VB semiconductor compounds, with decreasing their size, which is supported by available experimental and other t...