With the change in the wind profile, the speed of doubly fed induction generator (DFIG) of wind energy conversion system (WECS) changes from super synchronous to sub synchronous range and vice versa. DFIG is operated to generate quality power; hence, power at rotor side is controlled using matrix converter taking power from grid and feeding back power to the grid depending on the wind profile. ...

This paper presents dc-dc converter operation of boost converter are an enabling soft switching technology. This proposed converter configuration can achieve zero voltage switching. The circuit consists of a general boost Converter with an auxiliary circuit which has a additional switch, and resonant components (snubbers). Boost converter has loss mechanism, current stress and voltage stress. b...

A stress procedure for reliability screening, SHOrt Voltage Elevation (SHOVE) test, is analyzed here. During SHOVE, test vectors are run at higher-than-normal supply voltage for a short period. Functional tests and IDDQ tests are then performed at the normal voltage. This procedure is effective in screening oxide thinning, which occurs when the oxide thickness of a transistor is less than expec...

Accurate determination of the pull-in, or the collapse voltage is critical in the design process. In this paper an analytical method is presented that provides a more accurate determination of the pull-in voltage for MEMS capacitive devices with clamped square diaphragm. The method incorporates both the linearized modle of the electrostatic force and the nonlinear deflection model of a clamped ...

─ This paper presents a voltage doubler in to a half bridge converter is derived for electric vehicle battery chargers. The proposed converter provides wide ZVS range, reduced circulating current and also voltage stress. Circulating current during the freewheeling phases of phase shift full bridge circuit are reset by the sum of LLC circuit output voltage and resonant capacitor voltage by achie...

n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces a...

In this paper, we study amorphous silicon thin-lmtransistor (TFT) degradation under bias stress effect. To model threshold voltage shift with bias stress effect, fabricated samples are measured for I-V data with bias stress in variations of temperature. Rensselaer Polytechnic Institute (RPI) model is thus adopted to extract model parameters, such as the flat band voltage (VFB), the characteris...