HEALERS is a practical, high-performance toolkit that can enhance the robustness and security of existing applications. For any shared library, it can find all functions defined in that library and automatically derives properties for those functions. Through automated faultinjection experiments, it can detect arguments that cause the library to crash and derive safe argument types for each fun...

Since the introduction of the IGBT module, improvements in power loss have been achieved by applying new technologies. With the process improvements of the past few years in trench gate technology and light-punch-through vertical structures, it had been thought that the performance of the latest IGBT and pin diode silicon power devices had been brought as close to their theoretical limit as pos...

We have studied the blue shift in photoluminescence emission energy of pseudomorphic InGaAs/ GaAs quantum wells grown on patterned ~001! GaAs substrates with grooves and trenches having vertical sidewalls made by dry etching. Dependence of the blue shift, which can be as large as 51 meV, on the direction, feature size, and the etch depth of the patterns as well as the thickness of the buffer la...

This paper presents a complete analytical solution to describe tidal groundwater level fluctuations in a coastal subsurface system. The system consists of two aquifers and a leaky layer between them. Previous solutions of Jacob [Flow of groundwater, in: H. Rouse (Ed.), Engineering Hydraulics, Wiley, New York, 1950, pp. 321–386], Jiao and Tang [Water Resour. Res. 35 (3) (1999) 747], Li and Jiao ...

Vertical GaN-on-Si devices are promising for the next-generation high-voltage power electronics with low cost and high efficiency. However, their applications impeded by limited thickness of crack-free GaN layers threading dislocation density (TDD) in layer. Buffer crucial stress control while they usually behave poor surface morphology, which causes early relaxation thickness. Hereby, a terrac...

We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and unifor...