نتایج جستجو برای: uv leds

تعداد نتایج: 74565  

Journal: :Journal of Physics D 2021

Abstract The light extraction efficiency (LEE), external quantum (EQE), and current–voltage characteristics of deep ultraviolet emitting diodes (DUV-LEDs) with different aluminum mole fractions in the p-AlGaN layers have been investigated. Optimizing layer composition requires a tradeoff between reducing absorption losses limiting increases p-contact resistance operation voltage. AlGaN multiple...

2015
Hyun Jeong Seung Yol Jeong Doo Jae Park Hyeon Jun Jeong Sooyeon Jeong Joong Tark Han Hee Jin Jeong Sunhye Yang Ho Young Kim Kang-Jun Baeg Sae June Park Yeong Hwan Ahn Eun-Kyung Suh Geon-Woong Lee Young Hee Lee Mun Seok Jeong

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key st...

Journal: :Lithuanian Journal of Physics 2019

Journal: :IEEJ Transactions on Electronics, Information and Systems 2005

2012
Sara C. P. Rodrigues Guilherme M. Sipahi Luísa Scolfaro Eronides F. da Silva

Excellent progress has been made during the past few years in the growth of III-nitride materials and devices. Today, one of the most important application of novel optoelectronic devices is the design and engineering of light-emitting diodes (LEDs) working from ultraviolet (UV) through infrared (IR), thus covering the whole visible spectrum. Since the pioneer works of Nakamura et al. at Nichia...

2017
Hongpo Hu Shengjun Zhou Xingtong Liu Yilin Gao Chengqun Gui Sheng Liu

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD)...

Legionella infections caused by contaminated water are a widespread problem worldwide. Discharge lamps like mercury vapor lamps are widely known for the disinfection properties of their radiation, but they suffer technical disadvantages, like high voltages and toxic content, and are, therefore, not suitable for some infection control applications. New high-intensity ultraviolet (UV) an...

2011
Ijaz Hussain Nargis Bano Sajjad Hussain Yousuf Soomro Omer Nur Magnus Willander

In this study, the low temperature aqueous chemical growth (ACG) method was employed to synthesized ZnO nanorods to process-organic hybrid white light emitting diodes (LEDs) on glass substrate. Electroluminescence spectra of the hybrid white LEDs demonstrate the combination of emission bands arising from radiative recombination of the organic and ZnO nanorods (NRs). Depth resolved luminescence ...

2004
K. H. Kim H. X. Jiang

AlGaN-based deep-ultraviolet light-emitting diode (LED) structures, which radiate light at 305 and 290 nm, have been grown on sapphire substrates using an AlN epilayer template. The fabricated devices have a circular geometry to enhance current spreading and light extraction. Circular UV LEDs of different sizes have been characterized. It was found that smaller disk LEDs had higher saturation o...

Journal: :The Analyst 2008
Silvija Abele Fu-Qiang Nie Frantisek Foret Brett Paull Mirek Macka

For the first time photopolymerisation of polymer monoliths has been realised with UV-light emitting diodes (LEDs) as light source and demonstrated with polymethacrylate monoliths created in fused silica capillaries and plastic chips.

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