The only II-VI/II-VI wide band-gap heterojunction to provide both good lattice match and pand n-type dopability is CdSe/ZnTe. We have carried out numerical simulations of several light emitter designs incorporating CdSe, ZnTe, and Mg alloys. In the simulations, Poisson’s equation is solved in conjunction with the hole and electron current and continuity equations. Radiative and nonradiative rec...

We analyze the energy spectrum of a positively charged exciton confined in a semiconductor heterostructure formed by two vertically coupled, axially symmetrical type II quantum dots located close to each other. The electron in the structure is mainly located inside the dots, while the holes generally move in the exterior region close to the symmetry axis. The solutions of the Schrödinger equati...

We present a comparison between resonant Raman scattering experiments on a type II GaAs/ AlAs superlattice of short period and a single GaAs quantum well. Under resonant excitation, a continuous emission is observed in the low-frequency range of the two heterostructure Raman spectra. This scattering is analyzed in terms of breakdown of the wavevector conservation law due to single quantum-well ...

We show that LO phonon-assisted interband tunneling in type-II intersubband laser heterostructures is more efficient for the fast depopulation of the lower lasing states than the corresponding intersubband process in type-I double quantum wells (DQW). The main peak of the electron-phonon resonance in type-II DQW corresponds to electron transitions from the lowest electron-like subband to the to...

The interface between wurtzite and zinc blende InP has been identified as type-II, where electrons gather on the side holes of interface. photoluminescence resulting from recombination across is expected to be long-lived exhibit non-exponential decay emission intensity after pulsed excitation. We verify this prediction using time-resolved spectroscopy nanowires containing a single heterostructu...

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...

objective: the aim of the present study was to investigate the prevalence of hypertension and type ii diabetes in elderly iranianresidents of the kahrizak charity foundation(kcf). materials and methods: in this cross-sectional study, a total of two hundred sixty eight men and women ≥60 years were studied. the data were collected during annual health examination of the elderly residents in kcf. ...

background: diabetic nephropathy is considered to be the most common cause of end stage renal disease (esrd). proteinuria is declared as the most marked risk factor in progression towards esrd. the aim of this study was to evaluate the efficacy of pentoxifylline for reduction of proteinuria in type ii diabetic patients. methods: from may 2007 to june 2008, this randomized clinical trial study w...